Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • U. Zeitler
  • H. W. Schumacher
  • R. J. Haug
  • A. G.M. Jansen

Organisationseinheiten

Externe Organisationen

  • Centre national de la recherche scientifique (CNRS)
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Details

OriginalspracheEnglisch
Seiten (von - bis)501-504
Seitenumfang4
FachzeitschriftPhysica B: Condensed Matter
Jahrgang298
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - 1 Apr. 2001

Abstract

We have observed strong transport anisotropies in magneto-transport experiments in the two-dimensional electron system of a SiGe heterostructure. These effects occur in tilted magnetic fields where two neighboring Landau levels with opposite spin are close to half filling. We propose that the observed anisotropies may be due to the formation of a unidirectional stripe phase formed by two energetically coinciding Landau levels.

ASJC Scopus Sachgebiete

Zitieren

Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field. / Zeitler, U.; Schumacher, H. W.; Haug, R. J. et al.
in: Physica B: Condensed Matter, Jahrgang 298, Nr. 1-4, 01.04.2001, S. 501-504.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Zeitler U, Schumacher HW, Haug RJ, Jansen AGM. Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field. Physica B: Condensed Matter. 2001 Apr 1;298(1-4):501-504. doi: 10.1016/S0921-4526(01)00371-4
Zeitler, U. ; Schumacher, H. W. ; Haug, R. J. et al. / Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field. in: Physica B: Condensed Matter. 2001 ; Jahrgang 298, Nr. 1-4. S. 501-504.
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abstract = "We have observed strong transport anisotropies in magneto-transport experiments in the two-dimensional electron system of a SiGe heterostructure. These effects occur in tilted magnetic fields where two neighboring Landau levels with opposite spin are close to half filling. We propose that the observed anisotropies may be due to the formation of a unidirectional stripe phase formed by two energetically coinciding Landau levels.",
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AU - Zeitler, U.

AU - Schumacher, H. W.

AU - Haug, R. J.

AU - Jansen, A. G.M.

N1 - Funding information: We would like to thank F. Schäffler for providing the sample and for helpful discussions. We acknowledge F. Evers, V.I. Fal'ko and D.G. Polyakov for illuminating discussions, and I. Hapke-Wurst, U.F. Keyser, A. Nauen and J. Regul for experimental assistance. Part of this work was supported by the TMR Programme of the European Union under contract no. ERBFMGECT950077.

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N2 - We have observed strong transport anisotropies in magneto-transport experiments in the two-dimensional electron system of a SiGe heterostructure. These effects occur in tilted magnetic fields where two neighboring Landau levels with opposite spin are close to half filling. We propose that the observed anisotropies may be due to the formation of a unidirectional stripe phase formed by two energetically coinciding Landau levels.

AB - We have observed strong transport anisotropies in magneto-transport experiments in the two-dimensional electron system of a SiGe heterostructure. These effects occur in tilted magnetic fields where two neighboring Landau levels with opposite spin are close to half filling. We propose that the observed anisotropies may be due to the formation of a unidirectional stripe phase formed by two energetically coinciding Landau levels.

KW - Coincidence experiments

KW - Quantum Hall effect

KW - Silicon-germanium heterostructure

KW - Stripe phases

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U2 - 10.1016/S0921-4526(01)00371-4

DO - 10.1016/S0921-4526(01)00371-4

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SP - 501

EP - 504

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -

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