Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1765-1772 |
| Seitenumfang | 8 |
| Fachzeitschrift | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Jahrgang | 21 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 5 Aug. 2003 |
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 21, Nr. 4, 05.08.2003, S. 1765-1772.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001)
T2 - Application to praseodymium oxide
AU - Fissel, A.
AU - Osten, H. J.
AU - Bugiel, E.
N1 - ACKNOWLEDGMENTS: Part of this work has been realized during our stay at IHP in Frankfurt~Oder!, Germany. The authors would like to thank various members of IHP for their contributions as well as for stimulating discussions. This work was partly supported by the German Federal Ministry of Education and Research in the framework of the central project KrisMOS (Grant No. 01M3142D).
PY - 2003/8/5
Y1 - 2003/8/5
UR - http://www.scopus.com/inward/record.url?scp=0141719634&partnerID=8YFLogxK
U2 - 10.1116/1.1589516
DO - 10.1116/1.1589516
M3 - Article
AN - SCOPUS:0141719634
VL - 21
SP - 1765
EP - 1772
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -