TY - JOUR

T1 - Towards controlled molecular beam epitaxial growth of artificially stacked Si

T2 - Study of boron adsorption and surface segregation on Si(1 1 1)

AU - Fissel, A.

AU - Krügener, J.

AU - Osten, H. J.

N1 - Funding information: The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project FI 726/3-2 ).

PY - 2011/5/15

Y1 - 2011/5/15

N2 - Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(1 1 1) exhibiting (√3×√3)R30°surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(1 1 1) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080 K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100 K.

AB - Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(1 1 1) exhibiting (√3×√3)R30°surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(1 1 1) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080 K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100 K.

KW - Molecular beam epitaxy

KW - Nucleation

KW - Reflection high-energy electron diffraction surface defects

KW - Semiconducting silicon

KW - Surface processes

KW - Ultraviolet photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=79957988851&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.12.001

DO - 10.1016/j.jcrysgro.2010.12.001

M3 - Article

AN - SCOPUS:79957988851

VL - 323

SP - 144

EP - 149

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1

ER -