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Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Mercedes-Benz Group AG

Details

OriginalspracheEnglisch
Seiten (von - bis)542-546
Seitenumfang5
FachzeitschriftSurface science
Jahrgang361-362
PublikationsstatusVeröffentlicht - 20 Juli 1996
Extern publiziertJa

Abstract

Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.

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Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures. / Weitz, P.; Haug, R. J.; Von Klitzing, K. et al.
in: Surface science, Jahrgang 361-362, 20.07.1996, S. 542-546.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Weitz P, Haug RJ, Von Klitzing K, Schäffler F. Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures. Surface science. 1996 Jul 20;361-362:542-546. doi: 10.1016/0039-6028(96)00465-7
Weitz, P. ; Haug, R. J. ; Von Klitzing, K. et al. / Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures. in: Surface science. 1996 ; Jahrgang 361-362. S. 542-546.
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T1 - Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures

AU - Weitz, P.

AU - Haug, R. J.

AU - Von Klitzing, K.

AU - Schäffler, F.

PY - 1996/7/20

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N2 - Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.

AB - Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.

KW - Electrical transport

KW - Electrical transport measurements

KW - Hall effect

KW - Heterojunctions

KW - Quantum effects

KW - Semiconductor-semiconductor heterojunctions

KW - Silicon-germanium

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