Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 317-324 |
| Seitenumfang | 8 |
| Fachzeitschrift | Magnetohydrodynamics |
| Jahrgang | 45 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - Juli 2009 |
Abstract
Numerical modeling of electromagnetic, thermal and flow field is used to analyze the influence of a travelling magnetic field (TMF) applied during crystal growth of GaAs in a VCz crystal growth system. The TMF is generated by a heater-magnet module (HMM), combining the generation of heat and electromagnetic Lorentz forces. The influence of different electric as well as geometric parameters on the TMF effects have been investigated. The numerical results allow an optimal HMM design for the VCz system for growing GaAs and other semiconductor crystals.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Magnetohydrodynamics, Jahrgang 45, Nr. 3, 07.2009, S. 317-324.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Three-dimensional transient modeling of the melt flow in a TMF VCz system for GaAs crystal growth
AU - Nacke, B.
AU - Kasjanow, H.
AU - Krause, A.
AU - Muizňieks, A.
AU - Kiessling, F. M.
AU - Rehse, U.
AU - Rudolph, P.
PY - 2009/7
Y1 - 2009/7
N2 - Numerical modeling of electromagnetic, thermal and flow field is used to analyze the influence of a travelling magnetic field (TMF) applied during crystal growth of GaAs in a VCz crystal growth system. The TMF is generated by a heater-magnet module (HMM), combining the generation of heat and electromagnetic Lorentz forces. The influence of different electric as well as geometric parameters on the TMF effects have been investigated. The numerical results allow an optimal HMM design for the VCz system for growing GaAs and other semiconductor crystals.
AB - Numerical modeling of electromagnetic, thermal and flow field is used to analyze the influence of a travelling magnetic field (TMF) applied during crystal growth of GaAs in a VCz crystal growth system. The TMF is generated by a heater-magnet module (HMM), combining the generation of heat and electromagnetic Lorentz forces. The influence of different electric as well as geometric parameters on the TMF effects have been investigated. The numerical results allow an optimal HMM design for the VCz system for growing GaAs and other semiconductor crystals.
UR - http://www.scopus.com/inward/record.url?scp=77950939788&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:77950939788
VL - 45
SP - 317
EP - 324
JO - Magnetohydrodynamics
JF - Magnetohydrodynamics
SN - 0024-998X
IS - 3
ER -