Details
| Originalsprache | Englisch |
|---|---|
| Seiten | 107-112 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 2016 |
| Veranstaltung | 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 - Nuremberg, Deutschland Dauer: 10 Mai 2016 → 12 Mai 2016 |
Konferenz
| Konferenz | 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016 |
|---|---|
| Land/Gebiet | Deutschland |
| Ort | Nuremberg |
| Zeitraum | 10 Mai 2016 → 12 Mai 2016 |
Abstract
In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Mathematik (insg.)
- Steuerung und Optimierung
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Informatik (insg.)
- Artificial intelligence
- Informatik (insg.)
- Hardware und Architektur
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
2016. 107-112 Beitrag in 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016, Nuremberg, Deutschland.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Thin-film based microtransformer suitable for high switching frequency power applications
AU - Dinulovic, Dragan
AU - Shousha, Mahmoud
AU - Haug, Martin
AU - Beringer, Sebastian
AU - Wurz, Marc Christopher
N1 - Publisher Copyright: © VDE VERLAG GMBH · Berlin · Offenbach. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
AB - In this paper, the design, the fabrication, and the characterization of on silicon integrated microtransformers will be presented. The microtransformer is suited for power applications at high switching frequency towards to 100 MHz. This device has stable L vs. f characteristic up to 50 MHz. The design is improved regarding to the electrical resistance and current capability. The microtransformer shows an inductivity of about 50 nH and can be applied for current higher than 1 A.
UR - http://www.scopus.com/inward/record.url?scp=85025657951&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:85025657951
SP - 107
EP - 112
T2 - 2016 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2016
Y2 - 10 May 2016 through 12 May 2016
ER -