Thin macroporous silicon heterojunction solar cells

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Marco Ernst
  • Rolf Brendel
  • Rafel Ferré
  • Nils Peter Harder

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)187-189
Seitenumfang3
FachzeitschriftPhysica Status Solidi - Rapid Research Letters
Jahrgang6
Ausgabenummer5
PublikationsstatusVeröffentlicht - 5 Apr. 2012

Abstract

We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (

ASJC Scopus Sachgebiete

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Thin macroporous silicon heterojunction solar cells. / Ernst, Marco; Brendel, Rolf; Ferré, Rafel et al.
in: Physica Status Solidi - Rapid Research Letters, Jahrgang 6, Nr. 5, 05.04.2012, S. 187-189.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Ernst M, Brendel R, Ferré R, Harder NP. Thin macroporous silicon heterojunction solar cells. Physica Status Solidi - Rapid Research Letters. 2012 Apr 5;6(5):187-189. doi: 10.1002/pssr.201206113
Ernst, Marco ; Brendel, Rolf ; Ferré, Rafel et al. / Thin macroporous silicon heterojunction solar cells. in: Physica Status Solidi - Rapid Research Letters. 2012 ; Jahrgang 6, Nr. 5. S. 187-189.
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N2 - We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (

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