Thin films of CoSi2 on Si1-yCy substrate layers

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • S. Teichert
  • M. Falke
  • H. Giesler
  • D. K. Sarkar
  • G. Beddies
  • H. J. Hinneberg
  • G. Lippert
  • J. Griesche
  • H. J. Osten

Externe Organisationen

  • Technische Universität Chemnitz
  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)193-197
Seitenumfang5
FachzeitschriftMicroelectronic engineering
Jahrgang50
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - Jan. 2000
Extern publiziertJa
Veranstaltung1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) - Ostende, Belgien
Dauer: 7 März 1999 → 10 März 1999

Abstract

The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

ASJC Scopus Sachgebiete

Zitieren

Thin films of CoSi2 on Si1-yCy substrate layers. / Teichert, S.; Falke, M.; Giesler, H. et al.
in: Microelectronic engineering, Jahrgang 50, Nr. 1-4, 01.2000, S. 193-197.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Teichert, S, Falke, M, Giesler, H, Sarkar, DK, Beddies, G, Hinneberg, HJ, Lippert, G, Griesche, J & Osten, HJ 2000, 'Thin films of CoSi2 on Si1-yCy substrate layers', Microelectronic engineering, Jg. 50, Nr. 1-4, S. 193-197. https://doi.org/10.1016/S0167-9317(99)00282-8
Teichert, S., Falke, M., Giesler, H., Sarkar, D. K., Beddies, G., Hinneberg, H. J., Lippert, G., Griesche, J., & Osten, H. J. (2000). Thin films of CoSi2 on Si1-yCy substrate layers. Microelectronic engineering, 50(1-4), 193-197. https://doi.org/10.1016/S0167-9317(99)00282-8
Teichert S, Falke M, Giesler H, Sarkar DK, Beddies G, Hinneberg HJ et al. Thin films of CoSi2 on Si1-yCy substrate layers. Microelectronic engineering. 2000 Jan;50(1-4):193-197. doi: 10.1016/S0167-9317(99)00282-8
Teichert, S. ; Falke, M. ; Giesler, H. et al. / Thin films of CoSi2 on Si1-yCy substrate layers. in: Microelectronic engineering. 2000 ; Jahrgang 50, Nr. 1-4. S. 193-197.
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abstract = "The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.",
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TY - JOUR

T1 - Thin films of CoSi2 on Si1-yCy substrate layers

AU - Teichert, S.

AU - Falke, M.

AU - Giesler, H.

AU - Sarkar, D. K.

AU - Beddies, G.

AU - Hinneberg, H. J.

AU - Lippert, G.

AU - Griesche, J.

AU - Osten, H. J.

PY - 2000/1

Y1 - 2000/1

N2 - The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

AB - The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

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U2 - 10.1016/S0167-9317(99)00282-8

DO - 10.1016/S0167-9317(99)00282-8

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VL - 50

SP - 193

EP - 197

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

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T2 - 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99)

Y2 - 7 March 1999 through 10 March 1999

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