Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 910-918 |
| Seitenumfang | 9 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 38 |
| Frühes Online-Datum | 5 Sept. 2013 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Veranstaltung | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Deutschland Dauer: 25 März 2013 → 27 März 2013 |
Abstract
We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 38, 2013, S. 910-918.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Thin crystalline macroporous silicon solar cells with ion implanted emitter
AU - Ernst, Marco
AU - Schulte-Huxel, Henning
AU - Niepelt, Raphael
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
N1 - Funding Information: The authors would like to thank Bernd Koch (Leibniz Universität Hannover) for performing the implantation and Anja Nowack (ISFH) for her valuable help with the macropore etching. This work was supported by the Federal Ministry for Environment, Nature Conservation, and Nuclear Safety under the contract FKZ 0325147.
PY - 2013
Y1 - 2013
N2 - We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.
AB - We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.
KW - Ion implantation
KW - Kerf-free
KW - Layer transfer
KW - Macroporous silicon
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84898720921&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.364
DO - 10.1016/j.egypro.2013.07.364
M3 - Conference article
AN - SCOPUS:84898720921
VL - 38
SP - 910
EP - 918
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -