Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 873-879 |
| Seitenumfang | 7 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 92 |
| Publikationsstatus | Veröffentlicht - Aug. 2016 |
| Veranstaltung | 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, Frankreich Dauer: 7 März 2016 → 9 März 2016 |
Abstract
We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling by a stress-inducing layer. For this, we deposit an Al stressor layer on top of an epitaxially grown silicon layer. A porous double layer underneath the epitaxial layer serves as determined breaking point. We directionally heat this sample stack and cool it afterwards for controlled spalling of the epitaxial layer from the substrate. We achieve a lift-off rate of 34 out of 36 detached samples. The porous silicon layer enables a smooth surface of the detached epitaxial layer and the remaining substrate. Compared to our standard spalling process the thickness variation of the detached layers is significantly reduced from ≤ 25 μm to less than 2 μm. Furthermore we show that the lifetime of the detached epitaxial layers does not suffer from the Al deposition and the lift-off process.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 92, 08.2016, S. 873-879.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates
AU - Steckenreiter, Verena
AU - Hensen, Jan
AU - Knorr, Alwina
AU - Niepelt, Raphael
AU - Brendel, Rolf
AU - Kajari-Schröder, Sarah
N1 - Funding Information: The authors thank Frank Heinemeyer for his valuable help with the sample metallization. We thank Dr. Felix Haase for support with lifetime data from epitaxial layers of a different batch. This work was supported by the Federal Ministry for Environment, Nature Conservation, and Nuclear Safety under the contract FKZ 0325461 and by the state of Lower Saxony.
PY - 2016/8
Y1 - 2016/8
N2 - We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling by a stress-inducing layer. For this, we deposit an Al stressor layer on top of an epitaxially grown silicon layer. A porous double layer underneath the epitaxial layer serves as determined breaking point. We directionally heat this sample stack and cool it afterwards for controlled spalling of the epitaxial layer from the substrate. We achieve a lift-off rate of 34 out of 36 detached samples. The porous silicon layer enables a smooth surface of the detached epitaxial layer and the remaining substrate. Compared to our standard spalling process the thickness variation of the detached layers is significantly reduced from ≤ 25 μm to less than 2 μm. Furthermore we show that the lifetime of the detached epitaxial layers does not suffer from the Al deposition and the lift-off process.
AB - We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling by a stress-inducing layer. For this, we deposit an Al stressor layer on top of an epitaxially grown silicon layer. A porous double layer underneath the epitaxial layer serves as determined breaking point. We directionally heat this sample stack and cool it afterwards for controlled spalling of the epitaxial layer from the substrate. We achieve a lift-off rate of 34 out of 36 detached samples. The porous silicon layer enables a smooth surface of the detached epitaxial layer and the remaining substrate. Compared to our standard spalling process the thickness variation of the detached layers is significantly reduced from ≤ 25 μm to less than 2 μm. Furthermore we show that the lifetime of the detached epitaxial layers does not suffer from the Al deposition and the lift-off process.
KW - carrier lifetime
KW - exfoliation
KW - kerf-free
KW - layer transfer
KW - spalling
KW - stress-indusing layer
UR - http://www.scopus.com/inward/record.url?scp=85014469227&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2016.07.096
DO - 10.1016/j.egypro.2016.07.096
M3 - Conference article
AN - SCOPUS:85014469227
VL - 92
SP - 873
EP - 879
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016
Y2 - 7 March 2016 through 9 March 2016
ER -