Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 081204 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 93 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - 5 Feb. 2016 |
Abstract
We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from previous work, we examine the TRPL of the GaAs free exciton second LO-phonon replica. This enables us to simultaneously monitor the unambiguous time evolution of the total exciton population and the cooling dynamics of the initially hot free exciton ensemble. We demonstrate by a model based on the Saha equation and the experimentally determined cooling behavior that the long-debated slow photoluminescence rise is caused by time-dependent shifts in the thermodynamic quasiequilibrium between free excitons and the uncorrelated electron-hole plasma.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 93, Nr. 8, 081204, 05.02.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs
AU - Beck, Michael
AU - Hübner, Jens
AU - Oestreich, Michael
AU - Bieker, S.
AU - Henn, T.
AU - Kiessling, T.
AU - Ossau, W.
AU - Molenkamp, L. W.
PY - 2016/2/5
Y1 - 2016/2/5
N2 - We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from previous work, we examine the TRPL of the GaAs free exciton second LO-phonon replica. This enables us to simultaneously monitor the unambiguous time evolution of the total exciton population and the cooling dynamics of the initially hot free exciton ensemble. We demonstrate by a model based on the Saha equation and the experimentally determined cooling behavior that the long-debated slow photoluminescence rise is caused by time-dependent shifts in the thermodynamic quasiequilibrium between free excitons and the uncorrelated electron-hole plasma.
AB - We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from previous work, we examine the TRPL of the GaAs free exciton second LO-phonon replica. This enables us to simultaneously monitor the unambiguous time evolution of the total exciton population and the cooling dynamics of the initially hot free exciton ensemble. We demonstrate by a model based on the Saha equation and the experimentally determined cooling behavior that the long-debated slow photoluminescence rise is caused by time-dependent shifts in the thermodynamic quasiequilibrium between free excitons and the uncorrelated electron-hole plasma.
UR - http://www.scopus.com/inward/record.url?scp=84958818590&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.93.081204
DO - 10.1103/PhysRevB.93.081204
M3 - Article
AN - SCOPUS:84958818590
VL - 93
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 8
M1 - 081204
ER -