Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies |
| Seiten | 64-69 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 2007 |
| Veranstaltung | Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, USA / Vereinigte Staaten Dauer: 9 Apr. 2007 → 13 Apr. 2007 |
Publikationsreihe
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Band | 996 |
| ISSN (Print) | 0272-9172 |
Abstract
The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
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Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. S. 64-69 (Materials Research Society Symposium Proceedings; Band 996).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Thermal stability of pt/epitaxial Gd2O3/Si stacks
AU - Lipp, E.
AU - Eizenberg, M.
AU - Czernohorsky, M.
AU - Osten, H. J.
PY - 2007
Y1 - 2007
N2 - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively
AB - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively
UR - http://www.scopus.com/inward/record.url?scp=70349935135&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70349935135
SN - 9781605604282
T3 - Materials Research Society Symposium Proceedings
SP - 64
EP - 69
BT - Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
T2 - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -