Thermal stability of Pr2O3 films grown on Si(100) substrate

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. Goryachko
  • J. P. Liu
  • D. Krüger
  • H. J. Osten
  • E. Bugiel
  • R. Kurps
  • V. Melnik

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • Kyiv National Taras Shevchenko University
  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1860-1866
Seitenumfang7
FachzeitschriftJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Jahrgang20
Ausgabenummer6
PublikationsstatusVeröffentlicht - 6 Nov. 2002
Extern publiziertJa

Abstract

The effects of thermal annealing on uncapped and Si-capped Pr2O3 films deposited on silicon substrate were investigated. For uncapped films, a rapid diffusion of Si out of the substrate was observed at temperatures starting from 700°C. The diffused Si oxidized and formed a Pr2O3-Prx-Oy-Siz mixture. The excess Si diffused through the film and formed a SiO2 rich layer on the surface.

ASJC Scopus Sachgebiete

Zitieren

Thermal stability of Pr2O3 films grown on Si(100) substrate. / Goryachko, A.; Liu, J. P.; Krüger, D. et al.
in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Jahrgang 20, Nr. 6, 06.11.2002, S. 1860-1866.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Goryachko, A, Liu, JP, Krüger, D, Osten, HJ, Bugiel, E, Kurps, R & Melnik, V 2002, 'Thermal stability of Pr2O3 films grown on Si(100) substrate', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Jg. 20, Nr. 6, S. 1860-1866. https://doi.org/10.1116/1.1507332
Goryachko, A., Liu, J. P., Krüger, D., Osten, H. J., Bugiel, E., Kurps, R., & Melnik, V. (2002). Thermal stability of Pr2O3 films grown on Si(100) substrate. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 20(6), 1860-1866. https://doi.org/10.1116/1.1507332
Goryachko A, Liu JP, Krüger D, Osten HJ, Bugiel E, Kurps R et al. Thermal stability of Pr2O3 films grown on Si(100) substrate. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2002 Nov 6;20(6):1860-1866. doi: 10.1116/1.1507332
Goryachko, A. ; Liu, J. P. ; Krüger, D. et al. / Thermal stability of Pr2O3 films grown on Si(100) substrate. in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2002 ; Jahrgang 20, Nr. 6. S. 1860-1866.
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