The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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Externe Organisationen

  • St. Petersburg State Polytechnical University
  • RAS - Ioffe Physico Technical Institute
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OriginalspracheEnglisch
Aufsatznummer075014
FachzeitschriftSemiconductor Science and Technology
Jahrgang33
Ausgabenummer7
PublikationsstatusVeröffentlicht - 11 Juni 2018

Abstract

Photo-induced current through nanocomposite heterojunction structures consisting of a TiO2 coating activated with embedded gold nanoparticles on top of Si, SiO2, and columnar structured SiO2 is studied. The highest photo-activity in the visible part of the spectrum is found in the composite containing pillar-like silicon dioxide nanostructures. Experimental results were qualitatively explained on the basis of Franz-Keldysh effect taking into account the effects of electrical inhomogeneities appearing at charged nanoparticles. It is established that processes at the interface between silicon and noble metal nanoparticles play an important role in charge carrier photo-generation which opens a new opportunity to tune the photo-response of a nanocomposite via changing heterostructure topology.

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The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles. / Mishin, Maxim V.; Vorobyev, Alexander A.; Kondrateva, Anastasia S. et al.
in: Semiconductor Science and Technology, Jahrgang 33, Nr. 7, 075014, 11.06.2018.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Mishin, MV, Vorobyev, AA, Kondrateva, AS, Koroleva, EY, Karaseov, PA, Bespalova, PG, Shakhmin, AL, Glukhovskoy, AV, Wurz, MC & Filimonov, AV 2018, 'The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles', Semiconductor Science and Technology, Jg. 33, Nr. 7, 075014. https://doi.org/10.1088/1361-6641/aac4f3
Mishin, M. V., Vorobyev, A. A., Kondrateva, A. S., Koroleva, E. Y., Karaseov, P. A., Bespalova, P. G., Shakhmin, A. L., Glukhovskoy, A. V., Wurz, M. C., & Filimonov, A. V. (2018). The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles. Semiconductor Science and Technology, 33(7), Artikel 075014. https://doi.org/10.1088/1361-6641/aac4f3
Mishin MV, Vorobyev AA, Kondrateva AS, Koroleva EY, Karaseov PA, Bespalova PG et al. The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles. Semiconductor Science and Technology. 2018 Jun 11;33(7):075014. doi: 10.1088/1361-6641/aac4f3
Mishin, Maxim V. ; Vorobyev, Alexander A. ; Kondrateva, Anastasia S. et al. / The mechanism of charge carrier generation at the TiO2—n-Si heterojunction activated by gold nanoparticles. in: Semiconductor Science and Technology. 2018 ; Jahrgang 33, Nr. 7.
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AU - Mishin, Maxim V.

AU - Vorobyev, Alexander A.

AU - Kondrateva, Anastasia S.

AU - Koroleva, Ekaterina Y.

AU - Karaseov, Platon A.

AU - Bespalova, Polina G.

AU - Shakhmin, Alexander L.

AU - Glukhovskoy, Anatoly V.

AU - Wurz, Marc Christopher

AU - Filimonov, Alexey V.

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