The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • P. Shekhter
  • A. R. Chaudhuri
  • A. Laha
  • S. Yehezkel
  • A. Shriki
  • H. J. Osten
  • M. Eizenberg

Organisationseinheiten

Externe Organisationen

  • Technion-Israel Institute of Technology
  • Indian Institute of Technology Bombay (IITB)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer262901
FachzeitschriftApplied physics letters
Jahrgang105
Ausgabenummer26
PublikationsstatusVeröffentlicht - 30 Dez. 2014

Abstract

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

ASJC Scopus Sachgebiete

Zitieren

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric. / Shekhter, P.; Chaudhuri, A. R.; Laha, A. et al.
in: Applied physics letters, Jahrgang 105, Nr. 26, 262901, 30.12.2014.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Shekhter, P, Chaudhuri, AR, Laha, A, Yehezkel, S, Shriki, A, Osten, HJ & Eizenberg, M 2014, 'The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric', Applied physics letters, Jg. 105, Nr. 26, 262901. https://doi.org/10.1063/1.4905356
Shekhter, P., Chaudhuri, A. R., Laha, A., Yehezkel, S., Shriki, A., Osten, H. J., & Eizenberg, M. (2014). The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric. Applied physics letters, 105(26), Artikel 262901. https://doi.org/10.1063/1.4905356
Shekhter P, Chaudhuri AR, Laha A, Yehezkel S, Shriki A, Osten HJ et al. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric. Applied physics letters. 2014 Dez 30;105(26):262901. doi: 10.1063/1.4905356
Shekhter, P. ; Chaudhuri, A. R. ; Laha, A. et al. / The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric. in: Applied physics letters. 2014 ; Jahrgang 105, Nr. 26.
Download
@article{57cc9947aa444121b2788459654d6d33,
title = "The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric",
abstract = "One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.",
author = "P. Shekhter and Chaudhuri, {A. R.} and A. Laha and S. Yehezkel and A. Shriki and Osten, {H. J.} and M. Eizenberg",
year = "2014",
month = dec,
day = "30",
doi = "10.1063/1.4905356",
language = "English",
volume = "105",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "26",

}

Download

TY - JOUR

T1 - The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

AU - Shekhter, P.

AU - Chaudhuri, A. R.

AU - Laha, A.

AU - Yehezkel, S.

AU - Shriki, A.

AU - Osten, H. J.

AU - Eizenberg, M.

PY - 2014/12/30

Y1 - 2014/12/30

N2 - One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

AB - One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

UR - http://www.scopus.com/inward/record.url?scp=84937231002&partnerID=8YFLogxK

U2 - 10.1063/1.4905356

DO - 10.1063/1.4905356

M3 - Article

AN - SCOPUS:84937231002

VL - 105

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 26

M1 - 262901

ER -