Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 242-251 |
| Seitenumfang | 10 |
| Fachzeitschrift | Surface science |
| Jahrgang | 196 |
| Ausgabenummer | 1-3 |
| Publikationsstatus | Veröffentlicht - 1988 |
| Extern publiziert | Ja |
Abstract
GaAs/AlGaAs heterojunctions were used to study the fractional quantum Hall effect and the exchange enhancement of the spin splitting in a tilted magnetic field. The activation energies for the Landau level filling factor μ = 2 3 increased by tilting the field, whereas the activation energy for v = 1 3 decreased. The activation energy for the filling factor v =1, which corresponds to the spin splitting of the lowest Landau level, showed a strong increase at small tilt angles and a smaller increase at high tilt angles. The enhanced g-factor was also seen in a direct measurement of the splitting at high tilt angles by the coincidence method.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Surface science, Jahrgang 196, Nr. 1-3, 1988, S. 242-251.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - The influence of a tilted magnetic field on the fractional quantum hall effect and the exchange enhancement of the spin splitting
AU - Haug, R. J.
AU - von Klitzing, K.
AU - Nicholas, R. J.
AU - Maan, J. C.
AU - Weimann, G.
PY - 1988
Y1 - 1988
N2 - GaAs/AlGaAs heterojunctions were used to study the fractional quantum Hall effect and the exchange enhancement of the spin splitting in a tilted magnetic field. The activation energies for the Landau level filling factor μ = 2 3 increased by tilting the field, whereas the activation energy for v = 1 3 decreased. The activation energy for the filling factor v =1, which corresponds to the spin splitting of the lowest Landau level, showed a strong increase at small tilt angles and a smaller increase at high tilt angles. The enhanced g-factor was also seen in a direct measurement of the splitting at high tilt angles by the coincidence method.
AB - GaAs/AlGaAs heterojunctions were used to study the fractional quantum Hall effect and the exchange enhancement of the spin splitting in a tilted magnetic field. The activation energies for the Landau level filling factor μ = 2 3 increased by tilting the field, whereas the activation energy for v = 1 3 decreased. The activation energy for the filling factor v =1, which corresponds to the spin splitting of the lowest Landau level, showed a strong increase at small tilt angles and a smaller increase at high tilt angles. The enhanced g-factor was also seen in a direct measurement of the splitting at high tilt angles by the coincidence method.
UR - http://www.scopus.com/inward/record.url?scp=33744693652&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(88)90689-9
DO - 10.1016/0039-6028(88)90689-9
M3 - Article
AN - SCOPUS:33744693652
VL - 196
SP - 242
EP - 251
JO - Surface science
JF - Surface science
SN - 0039-6028
IS - 1-3
ER -