Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 559-563 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
| Jahrgang | 208 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 8 März 2011 |
| Extern publiziert | Ja |
Abstract
We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to resolve these problems. In this paper we attempt to extend this model to the case of boron-containing n-type silicon. The model predicts that the defect will occur in such material, as has been observed experimentally. However, the tentatively predicted impact of the defect on carrier lifetimes in such material does not appear to be consistent with recent experimental results.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Physica Status Solidi (A) Applications and Materials Science, Jahrgang 208, Nr. 3, 08.03.2011, S. 559-563.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon
AU - MacDonald, D.
AU - Liu, A.
AU - Cuevas, A.
AU - Lim, B.
AU - Schmidt, J.
PY - 2011/3/8
Y1 - 2011/3/8
N2 - We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to resolve these problems. In this paper we attempt to extend this model to the case of boron-containing n-type silicon. The model predicts that the defect will occur in such material, as has been observed experimentally. However, the tentatively predicted impact of the defect on carrier lifetimes in such material does not appear to be consistent with recent experimental results.
AB - We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to resolve these problems. In this paper we attempt to extend this model to the case of boron-containing n-type silicon. The model predicts that the defect will occur in such material, as has been observed experimentally. However, the tentatively predicted impact of the defect on carrier lifetimes in such material does not appear to be consistent with recent experimental results.
KW - boron-oxygen defect
KW - compensation
KW - recombination
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=79952529985&partnerID=8YFLogxK
U2 - 10.1002/pssa.201000146
DO - 10.1002/pssa.201000146
M3 - Article
AN - SCOPUS:79952529985
VL - 208
SP - 559
EP - 563
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 3
ER -