The effects of proton irradiation on SiGe: C HBTs

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autorschaft

  • Shiming Zhang
  • Guofu Niu
  • John D. Cressler
  • Hans Joerg Osten
  • Dieter Knoll
  • Cheryl J. Marshall
  • Paul W. Marshall
  • Hak S. Kim
  • Robert A. Reed

Externe Organisationen

  • Institute of Electrical and Electronics Engineers (IEEE)
  • Auburn University (AU)
  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • NASA Goddard Space Flight Center (NASA-GSFC)
  • Jackson and Tull Chartered Engineers
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2233-2237
Seitenumfang5
FachzeitschriftIEEE Transactions on Nuclear Science
Jahrgang48
Ausgabenummer6 I
PublikationsstatusVeröffentlicht - Dez. 2001
Extern publiziertJa
Veranstaltung2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Kanada
Dauer: 16 Juli 2001 → 20 Juli 2001

Abstract

The effects of 63-MeV proton irradiation on SiGe: C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe: C HBTs are investigated for proton fluences up to 5 × 10 13 p/cm 2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe: C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.

ASJC Scopus Sachgebiete

Zitieren

The effects of proton irradiation on SiGe: C HBTs. / Zhang, Shiming; Niu, Guofu; Cressler, John D. et al.
in: IEEE Transactions on Nuclear Science, Jahrgang 48, Nr. 6 I, 12.2001, S. 2233-2237.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Zhang, S, Niu, G, Cressler, JD, Osten, HJ, Knoll, D, Marshall, CJ, Marshall, PW, Kim, HS & Reed, RA 2001, 'The effects of proton irradiation on SiGe: C HBTs', IEEE Transactions on Nuclear Science, Jg. 48, Nr. 6 I, S. 2233-2237. https://doi.org/10.1109/23.983201
Zhang, S., Niu, G., Cressler, J. D., Osten, H. J., Knoll, D., Marshall, C. J., Marshall, P. W., Kim, H. S., & Reed, R. A. (2001). The effects of proton irradiation on SiGe: C HBTs. IEEE Transactions on Nuclear Science, 48(6 I), 2233-2237. https://doi.org/10.1109/23.983201
Zhang S, Niu G, Cressler JD, Osten HJ, Knoll D, Marshall CJ et al. The effects of proton irradiation on SiGe: C HBTs. IEEE Transactions on Nuclear Science. 2001 Dez;48(6 I):2233-2237. doi: 10.1109/23.983201
Zhang, Shiming ; Niu, Guofu ; Cressler, John D. et al. / The effects of proton irradiation on SiGe : C HBTs. in: IEEE Transactions on Nuclear Science. 2001 ; Jahrgang 48, Nr. 6 I. S. 2233-2237.
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abstract = "The effects of 63-MeV proton irradiation on SiGe: C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe: C HBTs are investigated for proton fluences up to 5 × 10 13 p/cm 2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe: C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.",
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Download

TY - JOUR

T1 - The effects of proton irradiation on SiGe

T2 - 2001 Nuclear and Sapce Radiation Effects Conference (NSREC)

AU - Zhang, Shiming

AU - Niu, Guofu

AU - Cressler, John D.

AU - Osten, Hans Joerg

AU - Knoll, Dieter

AU - Marshall, Cheryl J.

AU - Marshall, Paul W.

AU - Kim, Hak S.

AU - Reed, Robert A.

PY - 2001/12

Y1 - 2001/12

N2 - The effects of 63-MeV proton irradiation on SiGe: C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe: C HBTs are investigated for proton fluences up to 5 × 10 13 p/cm 2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe: C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.

AB - The effects of 63-MeV proton irradiation on SiGe: C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe: C HBTs are investigated for proton fluences up to 5 × 10 13 p/cm 2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe: C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.

KW - Neutral base recombination

KW - Proton irradiation

KW - SiGe: C heterojunction bipolar transistor (HBTs)

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