TY - GEN

T1 - The Comparison of the Reliability Performance of Different Top Metal Materials in MEMS Applications

AU - Hein, Verena

AU - Weide-Zaage, Kirsten

AU - Clausner, Andre

PY - 2024

Y1 - 2024

N2 - The combination of analog/mixed-signal, high-voltage and embedded non-volatile memory options with sensor and actuator integration is still common in automotive, industrial, communication and medical applications. MEMS with or without integrated CMOS, 3D integration micro transfer printing and integrated microfluid systems are in use to realize such applications. The established top metal interconnect materials for analog/mixed-signal CMOS applications are thick Aluminum (AlCu with Titan and Titanium Nitride) and thick Copper. Integrated noble metal electrodes are necessary for MEMS applications like microfluidics. The reliability requirements of a CMOS/ MEMS process differs from a long storage shelf life at room temperature, long life time for medical (in-body) or space applications up to high operating conditions for automotive and industrial applications like oil drilling. Applications, like functional surfaces, combine integrated circuits for example for next generation DNA sequencing. The noble metals for electrodes on top are thinner for such applications. An additional reliability challenge for such a lab on a chip is corrosion. Automotive applications have often mission profiles which need high currents, high temperature and a growing mechanical stability. The reliability of noble top metals is more and more under investigation because MEMS are more common in automotive products. The knowledge about reliability especially about mechanical properties is an interesting topic in addition to the results from standard tests like electro migration and stress migration tests because of the advanced mechanical stress in the applications and the danger of corrosion. The comparison of the electromigration performance and mechanical stability of AlCu, Copper, Gold and Platinum as thick and/ or top metal tracks is necessary to evaluate and assess the suitability of the materials for the different applications. The possibilities to generate test results for thick and or noble metals are limited because of the necessary long test times for thick metals and materials like Gold or Platinum. The interaction of different failure mechanisms and the different material and stack combinations of the CMOS part make an assessment difficult. Simulations can support the choice of materials by values for mechanical stress and stress divergences as well as they can deliver basic knowledge about the main failure mechanisms. Only a smaller number of varying interconnect stacks will be realized in a development of a new process. The basic knowledge from simulation results will help to decide about the type of reliability test and test effort for the process qualification.

AB - The combination of analog/mixed-signal, high-voltage and embedded non-volatile memory options with sensor and actuator integration is still common in automotive, industrial, communication and medical applications. MEMS with or without integrated CMOS, 3D integration micro transfer printing and integrated microfluid systems are in use to realize such applications. The established top metal interconnect materials for analog/mixed-signal CMOS applications are thick Aluminum (AlCu with Titan and Titanium Nitride) and thick Copper. Integrated noble metal electrodes are necessary for MEMS applications like microfluidics. The reliability requirements of a CMOS/ MEMS process differs from a long storage shelf life at room temperature, long life time for medical (in-body) or space applications up to high operating conditions for automotive and industrial applications like oil drilling. Applications, like functional surfaces, combine integrated circuits for example for next generation DNA sequencing. The noble metals for electrodes on top are thinner for such applications. An additional reliability challenge for such a lab on a chip is corrosion. Automotive applications have often mission profiles which need high currents, high temperature and a growing mechanical stability. The reliability of noble top metals is more and more under investigation because MEMS are more common in automotive products. The knowledge about reliability especially about mechanical properties is an interesting topic in addition to the results from standard tests like electro migration and stress migration tests because of the advanced mechanical stress in the applications and the danger of corrosion. The comparison of the electromigration performance and mechanical stability of AlCu, Copper, Gold and Platinum as thick and/ or top metal tracks is necessary to evaluate and assess the suitability of the materials for the different applications. The possibilities to generate test results for thick and or noble metals are limited because of the necessary long test times for thick metals and materials like Gold or Platinum. The interaction of different failure mechanisms and the different material and stack combinations of the CMOS part make an assessment difficult. Simulations can support the choice of materials by values for mechanical stress and stress divergences as well as they can deliver basic knowledge about the main failure mechanisms. Only a smaller number of varying interconnect stacks will be realized in a development of a new process. The basic knowledge from simulation results will help to decide about the type of reliability test and test effort for the process qualification.

KW - Failure mechanism

KW - Interconnect Reliability

KW - MEMS

KW - Noble metal

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=85186647486&partnerID=8YFLogxK

U2 - 10.23919/PanPacific60013.2024.10436520

DO - 10.23919/PanPacific60013.2024.10436520

M3 - Conference contribution

AN - SCOPUS:85186647486

SN - 979-8-3503-1853-1

BT - 2024 Pan Pacific Strategic Electronics Symposium

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Pan Pacific Strategic Electronics Symposium, Pan Pacific 2024

Y2 - 29 January 2024 through 1 February 2024

ER -