Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
| Seiten | 30-35 |
| Seitenumfang | 6 |
| ISBN (elektronisch) | 9781424429509 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Extern publiziert | Ja |
| Veranstaltung | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, USA / Vereinigte Staaten Dauer: 7 Juni 2009 → 12 Juni 2009 Konferenznummer: 34 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 30-35 5411768 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - The ALU+ concept
T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
AU - Bock, Robert
AU - Schmidt, Jan
AU - Mau, Susanne
AU - Hoex, Bram
AU - Kessels, Erwin
AU - Brendel, Rolf
N1 - Conference code: 34
PY - 2009
Y1 - 2009
N2 - Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
AB - Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al 2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screen-printed Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al 2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np + solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
UR - http://www.scopus.com/inward/record.url?scp=77951528055&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411768
DO - 10.1109/PVSC.2009.5411768
M3 - Conference contribution
AN - SCOPUS:77951528055
SN - 978-1-4244-2949-3
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 30
EP - 35
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -