Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • M. Salman
  • F. Gouider
  • H. Schmidt
  • Yu B. Vasilyev
  • R. J. Haug
  • G. Nachtwei

Organisationseinheiten

Externe Organisationen

  • NTH Nano School for Contacts in Nanosystems
  • Technische Universität Braunschweig
  • RAS - Ioffe Physico Technical Institute
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1208-1210
Seitenumfang3
FachzeitschriftPhysica Status Solidi (C) Current Topics in Solid State Physics
Jahrgang8
Ausgabenummer4
PublikationsstatusVeröffentlicht - 1 Apr. 2011

Abstract

In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

ASJC Scopus Sachgebiete

Zitieren

Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. / Salman, M.; Gouider, F.; Schmidt, H. et al.
in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 8, Nr. 4, 01.04.2011, S. 1208-1210.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Salman, M, Gouider, F, Schmidt, H, Vasilyev, YB, Haug, RJ & Nachtwei, G 2011, 'Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices', Physica Status Solidi (C) Current Topics in Solid State Physics, Jg. 8, Nr. 4, S. 1208-1210. https://doi.org/10.1002/pssc.201000827
Salman, M., Gouider, F., Schmidt, H., Vasilyev, Y. B., Haug, R. J., & Nachtwei, G. (2011). Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1208-1210. https://doi.org/10.1002/pssc.201000827
Salman M, Gouider F, Schmidt H, Vasilyev YB, Haug RJ, Nachtwei G. Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 Apr 1;8(4):1208-1210. doi: 10.1002/pssc.201000827
Salman, M. ; Gouider, F. ; Schmidt, H. et al. / Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. in: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Jahrgang 8, Nr. 4. S. 1208-1210.
Download
@article{b120a87c4cc64f72a382d4b2fcb7b44d,
title = "Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices",
abstract = "In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.",
keywords = "Graphene, Landau levels, Photoresponse, Terahertz",
author = "M. Salman and F. Gouider and H. Schmidt and Vasilyev, {Yu B.} and Haug, {R. J.} and G. Nachtwei",
year = "2011",
month = apr,
day = "1",
doi = "10.1002/pssc.201000827",
language = "English",
volume = "8",
pages = "1208--1210",
number = "4",

}

Download

TY - JOUR

T1 - Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices

AU - Salman, M.

AU - Gouider, F.

AU - Schmidt, H.

AU - Vasilyev, Yu B.

AU - Haug, R. J.

AU - Nachtwei, G.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

AB - In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

KW - Graphene

KW - Landau levels

KW - Photoresponse

KW - Terahertz

UR - http://www.scopus.com/inward/record.url?scp=79953740467&partnerID=8YFLogxK

U2 - 10.1002/pssc.201000827

DO - 10.1002/pssc.201000827

M3 - Article

AN - SCOPUS:79953740467

VL - 8

SP - 1208

EP - 1210

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 4

ER -

Von denselben Autoren