Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 19455 |
| Fachzeitschrift | Scientific reports |
| Jahrgang | 13 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Dez. 2023 |
| Extern publiziert | Ja |
Abstract
This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.
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in: Scientific reports, Jahrgang 13, Nr. 1, 19455, 12.2023.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Temperature-dependent photo-elastic coefficient of silicon at 1550 nm
AU - Dickmann, Johannes
AU - Meyer, Jan
AU - Gaedtke, Mika
AU - Kroker, Stefanie
N1 - Funding information: Funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy EXC-2123 QuantumFrontiers 390837967. J.D. and S.K. also acknowledge partial support by European Association of National Metrology Institutes. This project (20FUN08 NEXTLASERS) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation programme, 17FUN05 PhotOQuant. Funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy EXC-2123 QuantumFrontiers 390837967. J.D. and S.K. also acknowledge partial support by European Association of National Metrology Institutes. This project (20FUN08 NEXTLASERS) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation programme, 17FUN05 PhotOQuant.
PY - 2023/12
Y1 - 2023/12
N2 - This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.
AB - This paper presents a study on the temperature dependent photo-elastic coefficient in single-crystal silicon with (100) and (110) orientations at a wavelength of 1550 nm. The measurement of the photo-elastic coefficient was performed using a polarimetric scheme across a wide temperature range from 5 to 300 K. The experimental setup employed high-sensitivity techniques and incorporated automatic beam path correction, ensuring precise and accurate determination of the coefficient’s values. The results show excellent agreement with previous measurements at room temperature, specifically yielding a value of dn/ dσ= - 2.463 × 10 - 11 1/Pa for the (100) orientation. Interestingly, there is a significant difference in photo-elasticity between the different crystal orientations of approximately 50 % . The photo-elastic coefficient’s absolute value increases by approximately 40% with decreasing temperature down to 5 K. These findings provide valuable insights into the photo-elastic properties of silicon and its behavior under varying mechanical stress, particularly relevant for optomechanical precision experiments like cryogenic gravitational wave detectors and microscale optomechanical quantum sensors.
UR - http://www.scopus.com/inward/record.url?scp=85176142984&partnerID=8YFLogxK
U2 - 10.1038/s41598-023-46819-0
DO - 10.1038/s41598-023-46819-0
M3 - Article
C2 - 37945684
AN - SCOPUS:85176142984
VL - 13
JO - Scientific reports
JF - Scientific reports
SN - 2045-2322
IS - 1
M1 - 19455
ER -