Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs

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OriginalspracheEnglisch
Aufsatznummer125202
FachzeitschriftPhysical Review B
Jahrgang106
Ausgabenummer12
PublikationsstatusVeröffentlicht - 13 Sept. 2022

Abstract

We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.

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Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs. / Sterin, P.; Abaspour, L.; Lonnemann, J. G. et al.
in: Physical Review B, Jahrgang 106, Nr. 12, 125202, 13.09.2022.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Sterin P, Abaspour L, Lonnemann JG, Rugeramigabo EP, Huebner J, Oestreich M. Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs. Physical Review B. 2022 Sep 13;106(12):125202. doi: 10.1103/PhysRevB.106.125202
Sterin, P. ; Abaspour, L. ; Lonnemann, J. G. et al. / Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs. in: Physical Review B. 2022 ; Jahrgang 106, Nr. 12.
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title = "Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs",
abstract = "We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.",
author = "P. Sterin and L. Abaspour and Lonnemann, {J. G.} and Rugeramigabo, {E. P.} and J. Huebner and M. Oestreich",
note = "Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy EXC-2123 QuantumFrontiers 390837967, Major instrumentation Initiative Project No. 315579172, and OE 177/10-2.",
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T1 - Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs

AU - Sterin, P.

AU - Abaspour, L.

AU - Lonnemann, J. G.

AU - Rugeramigabo, E. P.

AU - Huebner, J.

AU - Oestreich, M.

N1 - Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy EXC-2123 QuantumFrontiers 390837967, Major instrumentation Initiative Project No. 315579172, and OE 177/10-2.

PY - 2022/9/13

Y1 - 2022/9/13

N2 - We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.

AB - We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.

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U2 - 10.1103/PhysRevB.106.125202

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