Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 125202 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 106 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 13 Sept. 2022 |
Abstract
We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.
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in: Physical Review B, Jahrgang 106, Nr. 12, 125202, 13.09.2022.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
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TY - JOUR
T1 - Temperature-dependent electron spin relaxation at the metal-to-insulator transition in n-type GaAs
AU - Sterin, P.
AU - Abaspour, L.
AU - Lonnemann, J. G.
AU - Rugeramigabo, E. P.
AU - Huebner, J.
AU - Oestreich, M.
N1 - Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy EXC-2123 QuantumFrontiers 390837967, Major instrumentation Initiative Project No. 315579172, and OE 177/10-2.
PY - 2022/9/13
Y1 - 2022/9/13
N2 - We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.
AB - We present a detailed study of the temperature-dependent electron spin relaxation rate in n-type bulk GaAs in the regime of the metal-to-insulator transition at vanishing magnetic fields. The high-accuracy measurements reveal the longest spin relaxation time for a doping concentration slightly below the metal-to-insulator transition at a finite temperature of ∼7K. This global minimum of the electron spin relaxation rate results from a delicate interplay of hyperfine interaction, variable range hopping, and the Dyakonov-Perel mechanism. At higher doping densities, the Dyakonov-Perel mechanism becomes dominant at all temperatures changing with temperature gradually from the degenerate to the nondegenerate regime. A theoretical model including temperature-dependent transport data yields not only quantitative agreement with the experimental data but reveals additionally the gradual change from percolation-based large angle momentum scattering to ionized impurity small angle scattering. A simple interpolation of all available data allows to extract a maximal-possible spin relaxation time in n-doped, bulk GaAs for negligible external magnetic fields of ≈1μs.
UR - http://www.scopus.com/inward/record.url?scp=85138451052&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.106.125202
DO - 10.1103/PhysRevB.106.125202
M3 - Article
VL - 106
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 12
M1 - 125202
ER -