Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 193307 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 79 |
| Ausgabenummer | 19 |
| Publikationsstatus | Veröffentlicht - 18 Mai 2009 |
Abstract
Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 79, Nr. 19, 193307, 18.05.2009.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Temperature-dependent electron Landé g factor and the interband matrix element of GaAs
AU - Hübner, Jens
AU - Döhrmann, Stephanie
AU - Hägele, Daniel
AU - Oestreich, Michael
PY - 2009/5/18
Y1 - 2009/5/18
N2 - Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
AB - Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
UR - http://www.scopus.com/inward/record.url?scp=67449105609&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.193307
DO - 10.1103/PhysRevB.79.193307
M3 - Article
AN - SCOPUS:67449105609
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
M1 - 193307
ER -