Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3047-3053 |
| Seitenumfang | 7 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 95 |
| Ausgabenummer | 11 |
| Frühes Online-Datum | 20 Juli 2011 |
| Publikationsstatus | Veröffentlicht - Nov. 2011 |
Abstract
Knowing the substrate temperature during in-line high-rate Al deposition onto silicon solar cells is essential for understanding and improving the deposition process. We deposit 2 and 5 μm-thick aluminum layers at a dynamic deposition rate of 5 μm m/min onto 130 and 180 μm-thick, planar and pyramidally textured, p-type silicon wafers and measure the wafer temperature during the deposition. The temperature depends on the aluminum layer thickness, the wafer thickness, and the wafer emissivity. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 3%.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
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in: Solar Energy Materials and Solar Cells, Jahrgang 95, Nr. 11, 11.2011, S. 3047-3053.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Temperature of silicon wafers during in-line high-rate evaporation of aluminum
AU - Mader, Christoph
AU - Kessler, Michael
AU - Eitner, Ulrich
AU - Brendel, Rolf
N1 - Funding Information: The authors would like to thank Sarah Kajari-Schröder, Robert Bock, Frank Heinemeyer, and Daniel Münster, all from ISFH, and Jens-Peter Heinß from Fraunhofer FEP for their fruitful discussions. Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation, and Nuclear Safety (BMU) under the Contract no. 0327660 .
PY - 2011/11
Y1 - 2011/11
N2 - Knowing the substrate temperature during in-line high-rate Al deposition onto silicon solar cells is essential for understanding and improving the deposition process. We deposit 2 and 5 μm-thick aluminum layers at a dynamic deposition rate of 5 μm m/min onto 130 and 180 μm-thick, planar and pyramidally textured, p-type silicon wafers and measure the wafer temperature during the deposition. The temperature depends on the aluminum layer thickness, the wafer thickness, and the wafer emissivity. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 3%.
AB - Knowing the substrate temperature during in-line high-rate Al deposition onto silicon solar cells is essential for understanding and improving the deposition process. We deposit 2 and 5 μm-thick aluminum layers at a dynamic deposition rate of 5 μm m/min onto 130 and 180 μm-thick, planar and pyramidally textured, p-type silicon wafers and measure the wafer temperature during the deposition. The temperature depends on the aluminum layer thickness, the wafer thickness, and the wafer emissivity. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 3%.
KW - In-line evaporation
KW - Modeling
KW - Process optimization
KW - Silicon solar cell
KW - Temperature
UR - http://www.scopus.com/inward/record.url?scp=80051545183&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.06.031
DO - 10.1016/j.solmat.2011.06.031
M3 - Article
AN - SCOPUS:80051545183
VL - 95
SP - 3047
EP - 3053
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 11
ER -