Temperature Dependence of the Electron LandégFactor in GaAs

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  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)2315-2318
Seitenumfang4
FachzeitschriftPhysical Review Letters
Jahrgang74
Ausgabenummer12
PublikationsstatusVeröffentlicht - 20 März 1995
Extern publiziertJa

Abstract

The temperature dependent frequency of quantum beats of free electron Larmor precession in bulk GaAs yields the temperature variation from 5 to 200 K of the Landé g factor with high accuracy. The Landé g factor increases from -0.44 to -0.38 to -0.35 as the temperature increases from 5 to 100 to 150 K. The experimental results are in the opposite direction than prediction by kp theory manifesting the need for appreciable, temperature dependent corrections of this band model.

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Temperature Dependence of the Electron LandégFactor in GaAs. / Oestreich, Michael; Rühle, Wolfgang W.
in: Physical Review Letters, Jahrgang 74, Nr. 12, 20.03.1995, S. 2315-2318.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Oestreich M, Rühle WW. Temperature Dependence of the Electron LandégFactor in GaAs. Physical Review Letters. 1995 Mär 20;74(12):2315-2318. doi: 10.1103/PhysRevLett.74.2315, 10.1103/physrevlett.74.2315
Oestreich, Michael ; Rühle, Wolfgang W. / Temperature Dependence of the Electron LandégFactor in GaAs. in: Physical Review Letters. 1995 ; Jahrgang 74, Nr. 12. S. 2315-2318.
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