Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 595-600 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solid State Phenomena |
| Jahrgang | 47-48 |
| Publikationsstatus | Veröffentlicht - 1996 |
| Extern publiziert | Ja |
Abstract
The strain in pseudomorphically grown Si1-xGex layers can be reduced by adding a small amount of carbon up to 1% without a loss in structural identity and without introducing crystalline defects. At higher concentrations up to about 2% carbon an ununiform distribution of the strain in the layer was observed also accompanied by the absence of any crystalline defects. The carbon increases the stability of the SiGe layer not only by reducing the misfit strain but also by decreasing the dislocation mobility. After an annealing step a lot of small precipitates (probably β-SiC) have been observed in the Si1-yCy layer. We demonstrate the possibility to incorporate carbon as highly concentrated strain-stabilized about 8 monolayers (ML) thick SinC δ-layer with a nominal thickness of 1-1.5 ML carbon without introducing crystalline defects.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Werkstoffwissenschaften (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Solid State Phenomena, Jahrgang 47-48, 1996, S. 595-600.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - TEM analysis of structure modification induced by additional carbon incorporation in silicon and Si1-xGex layers grown with molecular beam epitaxy
AU - Bugiel, E.
AU - Ruvimov, S.
AU - Osten, H. J.
PY - 1996
Y1 - 1996
N2 - The strain in pseudomorphically grown Si1-xGex layers can be reduced by adding a small amount of carbon up to 1% without a loss in structural identity and without introducing crystalline defects. At higher concentrations up to about 2% carbon an ununiform distribution of the strain in the layer was observed also accompanied by the absence of any crystalline defects. The carbon increases the stability of the SiGe layer not only by reducing the misfit strain but also by decreasing the dislocation mobility. After an annealing step a lot of small precipitates (probably β-SiC) have been observed in the Si1-yCy layer. We demonstrate the possibility to incorporate carbon as highly concentrated strain-stabilized about 8 monolayers (ML) thick SinC δ-layer with a nominal thickness of 1-1.5 ML carbon without introducing crystalline defects.
AB - The strain in pseudomorphically grown Si1-xGex layers can be reduced by adding a small amount of carbon up to 1% without a loss in structural identity and without introducing crystalline defects. At higher concentrations up to about 2% carbon an ununiform distribution of the strain in the layer was observed also accompanied by the absence of any crystalline defects. The carbon increases the stability of the SiGe layer not only by reducing the misfit strain but also by decreasing the dislocation mobility. After an annealing step a lot of small precipitates (probably β-SiC) have been observed in the Si1-yCy layer. We demonstrate the possibility to incorporate carbon as highly concentrated strain-stabilized about 8 monolayers (ML) thick SinC δ-layer with a nominal thickness of 1-1.5 ML carbon without introducing crystalline defects.
UR - http://www.scopus.com/inward/record.url?scp=6944226683&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:6944226683
VL - 47-48
SP - 595
EP - 600
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
ER -