Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2329-2337 |
| Seitenumfang | 9 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 247 |
| Ausgabenummer | 10 |
| Frühes Online-Datum | 28 Sept. 2010 |
| Publikationsstatus | Veröffentlicht - Okt. 2010 |
| Extern publiziert | Ja |
Abstract
This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 247, Nr. 10, 10.2010, S. 2329-2337.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Tailoring the properties of semiconductor nanowires using ion beams
AU - Ronning, C.
AU - Borschel, C.
AU - Geburt, S.
AU - Niepelt, R.
AU - Müller, S.
AU - Stichtenoth, D.
AU - Richters, J. P.
AU - Dev, A.
AU - Voss, T.
AU - Chen, L.
AU - Heimbrodt, W.
AU - Gutsche, C.
AU - Prost, W.
PY - 2010/10
Y1 - 2010/10
N2 - This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
AB - This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
KW - Defects
KW - Ion beams
KW - Nanowires
UR - http://www.scopus.com/inward/record.url?scp=78650456595&partnerID=8YFLogxK
U2 - 10.1002/pssb.201046192
DO - 10.1002/pssb.201046192
M3 - Article
AN - SCOPUS:78650456595
VL - 247
SP - 2329
EP - 2337
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 10
ER -