Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | PCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019 |
| Untertitel | Proceedings |
| Herausgeber/-innen | Martina Amrhein, Anna Schulze Niehoff |
| Herausgeber (Verlag) | VDE Verlag GmbH |
| Seiten | 1466-1471 |
| Seitenumfang | 6 |
| ISBN (Print) | 9783800749386 |
| Publikationsstatus | Veröffentlicht - 2019 |
| Veranstaltung | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2019 - Nuremberg, Deutschland Dauer: 7 Mai 2019 → 9 Mai 2019 |
Publikationsreihe
| Name | PCIM Europe Conference Proceedings |
|---|---|
| ISSN (elektronisch) | 2191-3358 |
Abstract
This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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PCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019: Proceedings. Hrsg. / Martina Amrhein; Anna Schulze Niehoff. VDE Verlag GmbH, 2019. S. 1466-1471 (PCIM Europe Conference Proceedings).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Switching Characteristics of a 1.2kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver
AU - Wiesemann, Julius
AU - Sommer, Christian
AU - Mertens, Axel
PY - 2019
Y1 - 2019
N2 - This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.
AB - This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85082507836&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85082507836
SN - 9783800749386
T3 - PCIM Europe Conference Proceedings
SP - 1466
EP - 1471
BT - PCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
A2 - Amrhein, Martina
A2 - Schulze Niehoff, Anna
PB - VDE Verlag GmbH
T2 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2019
Y2 - 7 May 2019 through 9 May 2019
ER -