Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2641-2646 |
| Seitenumfang | 6 |
| Fachzeitschrift | Surface Science |
| Jahrgang | 601 |
| Ausgabenummer | 13 |
| Publikationsstatus | Veröffentlicht - 3 Juli 2007 |
Abstract
Four-point conductance measurements of a high temperature annealed monolayer of Pb on Si(5 5 7) are combined with tunneling microscopy (STM) and LEED for structural investigations. We found extremely high surface state conductance which becomes quasi-one-dimensional below a critical temperature of Tc = 78 K. The change from low to extremely high conductance anisotropy is associated with a reversible order-disorder phase transition with a temperature dependence ∝1/T + const. along the chains below the phase transition. Below the phase transition order is found simultaneously in the lateral separation between Pb chains and along the chains. There a 10-fold superperiodicity appears. We suggest that strong two-dimensional coupling, leading to electronic stabilization of terraces with a width of 4 frac(2, 3) lattice constants, results in perfect nesting normal to the chains at EF (below Tc), which is the origin of this switching to one-dimensional behavior. Therefore, no metal-insulator transition is expected at low temperature.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Surface Science, Jahrgang 601, Nr. 13, 03.07.2007, S. 2641-2646.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Switching between one- and two-dimensional conductance
T2 - Coupled chains in the monolayer of Pb on Si(5 5 7)
AU - Tegenkamp, Christoph
AU - Pfnür, Herbert
PY - 2007/7/3
Y1 - 2007/7/3
N2 - Four-point conductance measurements of a high temperature annealed monolayer of Pb on Si(5 5 7) are combined with tunneling microscopy (STM) and LEED for structural investigations. We found extremely high surface state conductance which becomes quasi-one-dimensional below a critical temperature of Tc = 78 K. The change from low to extremely high conductance anisotropy is associated with a reversible order-disorder phase transition with a temperature dependence ∝1/T + const. along the chains below the phase transition. Below the phase transition order is found simultaneously in the lateral separation between Pb chains and along the chains. There a 10-fold superperiodicity appears. We suggest that strong two-dimensional coupling, leading to electronic stabilization of terraces with a width of 4 frac(2, 3) lattice constants, results in perfect nesting normal to the chains at EF (below Tc), which is the origin of this switching to one-dimensional behavior. Therefore, no metal-insulator transition is expected at low temperature.
AB - Four-point conductance measurements of a high temperature annealed monolayer of Pb on Si(5 5 7) are combined with tunneling microscopy (STM) and LEED for structural investigations. We found extremely high surface state conductance which becomes quasi-one-dimensional below a critical temperature of Tc = 78 K. The change from low to extremely high conductance anisotropy is associated with a reversible order-disorder phase transition with a temperature dependence ∝1/T + const. along the chains below the phase transition. Below the phase transition order is found simultaneously in the lateral separation between Pb chains and along the chains. There a 10-fold superperiodicity appears. We suggest that strong two-dimensional coupling, leading to electronic stabilization of terraces with a width of 4 frac(2, 3) lattice constants, results in perfect nesting normal to the chains at EF (below Tc), which is the origin of this switching to one-dimensional behavior. Therefore, no metal-insulator transition is expected at low temperature.
KW - Low energy electron diffraction
KW - One-dimensional conductance
KW - Pb
KW - Tunneling microscopy
KW - Vicinal Si surface
UR - http://www.scopus.com/inward/record.url?scp=34250750168&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2006.11.068
DO - 10.1016/j.susc.2006.11.068
M3 - Article
AN - SCOPUS:34250750168
VL - 601
SP - 2641
EP - 2646
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 13
ER -