Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • J. Klatt
  • G. Lippert
  • E. Bugiel
  • S. Higuchi

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • Tosoh Corporation
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2507-2511
Seitenumfang5
FachzeitschriftJournal of applied physics
Jahrgang74
Ausgabenummer4
PublikationsstatusVeröffentlicht - 15 Aug. 1993
Extern publiziertJa

Abstract

Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.

ASJC Scopus Sachgebiete

Zitieren

Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te. / Osten, H. J.; Klatt, J.; Lippert, G. et al.
in: Journal of applied physics, Jahrgang 74, Nr. 4, 15.08.1993, S. 2507-2511.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten HJ, Klatt J, Lippert G, Bugiel E, Higuchi S. Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te. Journal of applied physics. 1993 Aug 15;74(4):2507-2511. doi: 10.1063/1.354690
Osten, H. J. ; Klatt, J. ; Lippert, G. et al. / Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te. in: Journal of applied physics. 1993 ; Jahrgang 74, Nr. 4. S. 2507-2511.
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AU - Osten, H. J.

AU - Klatt, J.

AU - Lippert, G.

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AU - Higuchi, S.

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