Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2507-2511 |
| Seitenumfang | 5 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 74 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 15 Aug. 1993 |
| Extern publiziert | Ja |
Abstract
Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.
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in: Journal of applied physics, Jahrgang 74, Nr. 4, 15.08.1993, S. 2507-2511.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
AU - Osten, H. J.
AU - Klatt, J.
AU - Lippert, G.
AU - Bugiel, E.
AU - Higuchi, S.
PY - 1993/8/15
Y1 - 1993/8/15
N2 - Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.
AB - Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.
UR - http://www.scopus.com/inward/record.url?scp=0001231524&partnerID=8YFLogxK
U2 - 10.1063/1.354690
DO - 10.1063/1.354690
M3 - Article
AN - SCOPUS:0001231524
VL - 74
SP - 2507
EP - 2511
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
ER -