Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 182102 |
| Seiten (von - bis) | 1-3 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 87 |
| Ausgabenummer | 18 |
| Publikationsstatus | Veröffentlicht - 24 Okt. 2005 |
Abstract
Fully relaxed, high-quality Ge layers were grown directly on Si(001) substrates by surfactant-mediated epitaxy at high temperature with large Sb flux. We attribute the low dislocation densities in our films to an abrupt strain relief via the formation of a regular array of 90°dislocations at the interface during the initial, microrough stage of growth. This mechanism of abrupt strain relaxation occurs exclusively under high Sb coverage at temperatures ∼700°C. The high growth temperature also enhances Sb segregation leading to a low background doping level of only (3-4× 1016) cm-3. Thus, we regard surfactant-mediated epitaxy of relaxed Ge on Si(001) as a promising candidate for device application.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 87, Nr. 18, 182102, 24.10.2005, S. 1-3.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities
AU - Wietler, T. F.
AU - Bugiel, E.
AU - Hofmann, K. R.
PY - 2005/10/24
Y1 - 2005/10/24
N2 - Fully relaxed, high-quality Ge layers were grown directly on Si(001) substrates by surfactant-mediated epitaxy at high temperature with large Sb flux. We attribute the low dislocation densities in our films to an abrupt strain relief via the formation of a regular array of 90°dislocations at the interface during the initial, microrough stage of growth. This mechanism of abrupt strain relaxation occurs exclusively under high Sb coverage at temperatures ∼700°C. The high growth temperature also enhances Sb segregation leading to a low background doping level of only (3-4× 1016) cm-3. Thus, we regard surfactant-mediated epitaxy of relaxed Ge on Si(001) as a promising candidate for device application.
AB - Fully relaxed, high-quality Ge layers were grown directly on Si(001) substrates by surfactant-mediated epitaxy at high temperature with large Sb flux. We attribute the low dislocation densities in our films to an abrupt strain relief via the formation of a regular array of 90°dislocations at the interface during the initial, microrough stage of growth. This mechanism of abrupt strain relaxation occurs exclusively under high Sb coverage at temperatures ∼700°C. The high growth temperature also enhances Sb segregation leading to a low background doping level of only (3-4× 1016) cm-3. Thus, we regard surfactant-mediated epitaxy of relaxed Ge on Si(001) as a promising candidate for device application.
UR - http://www.scopus.com/inward/record.url?scp=27344444318&partnerID=8YFLogxK
U2 - 10.1063/1.2120900
DO - 10.1063/1.2120900
M3 - Article
AN - SCOPUS:27344444318
VL - 87
SP - 1
EP - 3
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 18
M1 - 182102
ER -