Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Physics of Semiconductors |
| Untertitel | 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B |
| Seiten | 67-68 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 10 Apr. 2007 |
| Veranstaltung | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Österreich Dauer: 24 Juli 2006 → 28 Juli 2006 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 893 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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Physics of Semiconductors : 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. S. 67-68 (AIP Conference Proceedings; Band 893).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Surfactant-mediated epitaxy of germanium on structured silicon substrates
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
AU - Wietler, T. F.
AU - Bugiel, E.
AU - Hofmann, K. R.
PY - 2007/4/10
Y1 - 2007/4/10
N2 - As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
AB - As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
KW - Germanium
KW - Silicon
KW - Structured substrate
KW - Surfactant-mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=77958516068&partnerID=8YFLogxK
U2 - 10.1063/1.2729773
DO - 10.1063/1.2729773
M3 - Conference contribution
AN - SCOPUS:77958516068
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 67
EP - 68
BT - Physics of Semiconductors
Y2 - 24 July 2006 through 28 July 2006
ER -