Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 7275-7280 |
| Seitenumfang | 6 |
| Fachzeitschrift | ACS Omega |
| Jahrgang | 2 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 31 Okt. 2017 |
| Extern publiziert | Ja |
Abstract
The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5-9. The Ga-face has an isoelectric point at pH 5.5. The N-face shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self-assembly of a monolayer of diamond nanoparticles on the GaN surface. The subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films, confirming a seeding density in excess of 10 11 cm -2. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.
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in: ACS Omega, Jahrgang 2, Nr. 10, 31.10.2017, S. 7275-7280.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films
AU - Mandal, Soumen
AU - Thomas, Evan L. H.
AU - Middleton, Callum
AU - Gines, Laia
AU - Griffiths, James T.
AU - Kappers, Menno J.
AU - Oliver, Rachel A.
AU - Wallis, David J.
AU - Goff, Lucy E.
AU - Lynch, Stephen A.
AU - Kuball, Martin
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2017 American Chemical Society.
PY - 2017/10/31
Y1 - 2017/10/31
N2 - The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5-9. The Ga-face has an isoelectric point at pH 5.5. The N-face shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self-assembly of a monolayer of diamond nanoparticles on the GaN surface. The subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films, confirming a seeding density in excess of 10 11 cm -2. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.
AB - The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5-9. The Ga-face has an isoelectric point at pH 5.5. The N-face shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self-assembly of a monolayer of diamond nanoparticles on the GaN surface. The subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films, confirming a seeding density in excess of 10 11 cm -2. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.
UR - http://www.scopus.com/inward/record.url?scp=85032575922&partnerID=8YFLogxK
U2 - 10.1021/acsomega.7b01069
DO - 10.1021/acsomega.7b01069
M3 - Article
VL - 2
SP - 7275
EP - 7280
JO - ACS Omega
JF - ACS Omega
IS - 10
ER -