Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 137-142 |
| Seitenumfang | 6 |
| Fachzeitschrift | THIN SOLID FILMS |
| Jahrgang | 258 |
| Ausgabenummer | 1-2 |
| Publikationsstatus | Veröffentlicht - 15 März 1995 |
| Extern publiziert | Ja |
Abstract
Boron segregation from submonolayer interfacial B deposition during molecular beam epitaxy (MBE) growth of Si1-xGex and Si layers in the temperature range 350-800 °C has been investigated by high resolution secondary ion mass spectroscopy and modeled by an atomistic description as a function of growth temperature and alloy composition. In the case of Si-MBE, beginning at 550 °C segregation-induced profile broadening occurs and at 600 C kinks appear in the boron profiles developing into shoulders for higher growth temperatures. At temperatures above 700 °C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. For Si1-xGex growth the segregation is significantly reduced and a decay length of 0.6-0.8 nm can be obtained in the range 350-450 °C. From a fit of the B-profile between 450 °C and 600 °C we obtained a kinetic barrier for a jump to the surface state of approximately 2.1 eV and a Gibbsian heat of segregation of 0.44 eV in the case of Si-MBE. The transition temperature from strong surface segregation to kinetically limited segregation yields 640 °C. In the case of Si1-xGex growth the activation energy for segregation increases up to 4.5 eV for germanium, comparable with that of bulk diffusion.
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in: THIN SOLID FILMS, Jahrgang 258, Nr. 1-2, 15.03.1995, S. 137-142.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surface segregation of boron atoms in Si and strained Si1-xGex layers during MBE growth
T2 - experiment and simulation
AU - Krüger, D.
AU - Osten, H. J.
PY - 1995/3/15
Y1 - 1995/3/15
N2 - Boron segregation from submonolayer interfacial B deposition during molecular beam epitaxy (MBE) growth of Si1-xGex and Si layers in the temperature range 350-800 °C has been investigated by high resolution secondary ion mass spectroscopy and modeled by an atomistic description as a function of growth temperature and alloy composition. In the case of Si-MBE, beginning at 550 °C segregation-induced profile broadening occurs and at 600 C kinks appear in the boron profiles developing into shoulders for higher growth temperatures. At temperatures above 700 °C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. For Si1-xGex growth the segregation is significantly reduced and a decay length of 0.6-0.8 nm can be obtained in the range 350-450 °C. From a fit of the B-profile between 450 °C and 600 °C we obtained a kinetic barrier for a jump to the surface state of approximately 2.1 eV and a Gibbsian heat of segregation of 0.44 eV in the case of Si-MBE. The transition temperature from strong surface segregation to kinetically limited segregation yields 640 °C. In the case of Si1-xGex growth the activation energy for segregation increases up to 4.5 eV for germanium, comparable with that of bulk diffusion.
AB - Boron segregation from submonolayer interfacial B deposition during molecular beam epitaxy (MBE) growth of Si1-xGex and Si layers in the temperature range 350-800 °C has been investigated by high resolution secondary ion mass spectroscopy and modeled by an atomistic description as a function of growth temperature and alloy composition. In the case of Si-MBE, beginning at 550 °C segregation-induced profile broadening occurs and at 600 C kinks appear in the boron profiles developing into shoulders for higher growth temperatures. At temperatures above 700 °C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. For Si1-xGex growth the segregation is significantly reduced and a decay length of 0.6-0.8 nm can be obtained in the range 350-450 °C. From a fit of the B-profile between 450 °C and 600 °C we obtained a kinetic barrier for a jump to the surface state of approximately 2.1 eV and a Gibbsian heat of segregation of 0.44 eV in the case of Si-MBE. The transition temperature from strong surface segregation to kinetically limited segregation yields 640 °C. In the case of Si1-xGex growth the activation energy for segregation increases up to 4.5 eV for germanium, comparable with that of bulk diffusion.
KW - Boron
KW - Molecular beam epitaxy
KW - Segregation
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0342551974&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(94)06385-0
DO - 10.1016/0040-6090(94)06385-0
M3 - Article
AN - SCOPUS:0342551974
VL - 258
SP - 137
EP - 142
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1-2
ER -