Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 164-170 |
| Seitenumfang | 7 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 16 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - März 2001 |
| Extern publiziert | Ja |
Abstract
Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality on the low-resistivity (∼1 Ω cm) p-Si base as well as on n+-diffused solar cell emitters with the oxide/nitride stacks showing a much better thermal stability. Both techniques are then applied to fabricate front- and rear-passivated silicon solar cells. Open-circuit voltages in the vicinity of 670 mV are obtained with both passivation techniques on float-zone single-crystalline silicon wafers, demonstrating the outstanding surface passivation quality of the applied passivation schemes on real devices. All-SiN passivated multicrystalline silicon solar cells achieve an open-circuit voltage of 655 mV, which is amongst the highest open-circuit voltages attained on this kind of substrate material. The high open-circuit voltage of the multicrystalline silicon solar cells results not only from the excellent degree of surface passivation but also from the ability of the cell fabrication to maintain a relatively high bulk lifetime (>20 μs) due to the low thermal budget of the surface passivation process.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Semiconductor Science and Technology, Jahrgang 16, Nr. 3, 03.2001, S. 164-170.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks
AU - Schmidt, J.
AU - Kerr, M.
AU - Cuevas, A.
PY - 2001/3
Y1 - 2001/3
N2 - Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality on the low-resistivity (∼1 Ω cm) p-Si base as well as on n+-diffused solar cell emitters with the oxide/nitride stacks showing a much better thermal stability. Both techniques are then applied to fabricate front- and rear-passivated silicon solar cells. Open-circuit voltages in the vicinity of 670 mV are obtained with both passivation techniques on float-zone single-crystalline silicon wafers, demonstrating the outstanding surface passivation quality of the applied passivation schemes on real devices. All-SiN passivated multicrystalline silicon solar cells achieve an open-circuit voltage of 655 mV, which is amongst the highest open-circuit voltages attained on this kind of substrate material. The high open-circuit voltage of the multicrystalline silicon solar cells results not only from the excellent degree of surface passivation but also from the ability of the cell fabrication to maintain a relatively high bulk lifetime (>20 μs) due to the low thermal budget of the surface passivation process.
AB - Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality on the low-resistivity (∼1 Ω cm) p-Si base as well as on n+-diffused solar cell emitters with the oxide/nitride stacks showing a much better thermal stability. Both techniques are then applied to fabricate front- and rear-passivated silicon solar cells. Open-circuit voltages in the vicinity of 670 mV are obtained with both passivation techniques on float-zone single-crystalline silicon wafers, demonstrating the outstanding surface passivation quality of the applied passivation schemes on real devices. All-SiN passivated multicrystalline silicon solar cells achieve an open-circuit voltage of 655 mV, which is amongst the highest open-circuit voltages attained on this kind of substrate material. The high open-circuit voltage of the multicrystalline silicon solar cells results not only from the excellent degree of surface passivation but also from the ability of the cell fabrication to maintain a relatively high bulk lifetime (>20 μs) due to the low thermal budget of the surface passivation process.
UR - http://www.scopus.com/inward/record.url?scp=0035281088&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/16/3/308
DO - 10.1088/0268-1242/16/3/308
M3 - Article
AN - SCOPUS:0035281088
VL - 16
SP - 164
EP - 170
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
ER -