Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 461-466 |
| Seitenumfang | 6 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 16 |
| Ausgabenummer | 6 |
| Frühes Online-Datum | 3 März 2008 |
| Publikationsstatus | Veröffentlicht - Sept. 2008 |
| Extern publiziert | Ja |
Abstract
Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20 6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2O3, resulting in a rear SRV of 90 cm/s.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Progress in Photovoltaics: Research and Applications, Jahrgang 16, Nr. 6, 09.2008, S. 461-466.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
AU - Schmidt, J.
AU - Merkle, A.
AU - Brendel, R.
AU - Hoex, B.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
N1 - Funding Information: We gratefullyacknowledge the financial support provided by theGerman State of Lower Saxony and the NetherlandsTechnology Foundation STW.
PY - 2008/9
Y1 - 2008/9
N2 - Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20 6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2O3, resulting in a rear SRV of 90 cm/s.
AB - Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20 6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2O3, resulting in a rear SRV of 90 cm/s.
KW - Aluminium oxide
KW - Crystalline silicon solar cells
KW - High-efficiency cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=50849095689&partnerID=8YFLogxK
U2 - 10.1002/pip.823
DO - 10.1002/pip.823
M3 - Article
AN - SCOPUS:50849095689
VL - 16
SP - 461
EP - 466
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -