Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • E. Bugiel
  • J. Klatt

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1918-1920
Seitenumfang3
FachzeitschriftApplied physics letters
Jahrgang61
Ausgabenummer16
Frühes Online-Datum19 Okt. 1992
PublikationsstatusElektronisch veröffentlicht (E-Pub) - 19 Okt. 1992
Extern publiziertJa

Abstract

Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.

ASJC Scopus Sachgebiete

Zitieren

Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). / Osten, H. J.; Bugiel, E.; Klatt, J.
in: Applied physics letters, Jahrgang 61, Nr. 16, 19.10.1992, S. 1918-1920.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten HJ, Bugiel E, Klatt J. Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). Applied physics letters. 1992 Okt 19;61(16):1918-1920. Epub 1992 Okt 19. doi: 10.1063/1.108363
Osten, H. J. ; Bugiel, E. ; Klatt, J. / Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). in: Applied physics letters. 1992 ; Jahrgang 61, Nr. 16. S. 1918-1920.
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