Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 268-274 |
| Seitenumfang | 7 |
| Fachzeitschrift | Materials Science and Engineering B |
| Jahrgang | 36 |
| Ausgabenummer | 1-3 |
| Publikationsstatus | Veröffentlicht - Jan. 1996 |
| Extern publiziert | Ja |
Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Materials Science and Engineering B, Jahrgang 36, Nr. 1-3, 01.1996, S. 268-274.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Supersaturated carbon in silicon and silicon/germanium alloys
AU - Osten, H. J.
PY - 1996/1
Y1 - 1996/1
N2 - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
AB - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
KW - Alloys
KW - Carbon
KW - Silicon
KW - Supersaturation
UR - http://www.scopus.com/inward/record.url?scp=0010340511&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(95)01272-9
DO - 10.1016/0921-5107(95)01272-9
M3 - Article
AN - SCOPUS:0010340511
VL - 36
SP - 268
EP - 274
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
ER -