Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 105-108 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronic Engineering |
| Jahrgang | 46 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Mai 1999 |
| Extern publiziert | Ja |
| Veranstaltung | 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven Dauer: 22 Sept. 1998 → 24 Sept. 1998 |
Abstract
Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronic Engineering, Jahrgang 46, Nr. 1, 05.1999, S. 105-108.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Sub-100 nm structures by neutral atom lithography
AU - Schulze, Th
AU - Brezger, B.
AU - Schmidt, Piet Oliver
AU - Mertens, R.
AU - Bell, A. S.
AU - Pfau, T.
AU - Mlynek, J.
N1 - Funding information: We appreciate financial support by the Deutsche Forschungsgemeinschaft (SFB 513) and the Optik Zentrum Konstanz.
PY - 1999/5
Y1 - 1999/5
N2 - Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
AB - Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
UR - http://www.scopus.com/inward/record.url?scp=0033131589&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00026-X
DO - 10.1016/S0167-9317(99)00026-X
M3 - Conference article
AN - SCOPUS:0033131589
VL - 46
SP - 105
EP - 108
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1
T2 - 1998 International Conference on Micro- and Nanofabrication (MNE98)
Y2 - 22 September 1998 through 24 September 1998
ER -