Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Herausgeber/-innen | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Seiten | 2887-2892 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Extern publiziert | Ja |
| Veranstaltung | 3rd World Conference on Photovoltaic Energy Conversion, 2003 - Osaka, Japan Dauer: 11 Mai 2003 → 18 Mai 2003 |
Publikationsreihe
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Band | C |
Abstract
In order to reveal the core structure of the performance-limiting metastable defect centre in Czochralski-silicon (Cz-Si) solar cells, the quantitative correlation of the defect concentration with the boron and the oxygen contents is investigated on a large number of different Cz-Si materials. The experimental results indicate that the defect is composed of one substitutional boron and two interstitial oxygen atoms. Formation and annihilation of the metastable boron-oxygen complex are found to be thermally activated processes, characterized by two strongly differing activation energies. Intensity-dependent measurements of the defect generation rate show that the defect generation rate increases proportionally with light intensity below 0.01 suns and saturates at higher intensities. All experimental results can be consistently explained by our recently proposed defect reaction model. In this model, fast-diffusing oxygen dimers (O2i) are captured by substitutional boron (Bs) to form a metastable Bs-O 2i complex. Based on this model, new strategies for an effective reduction of the light degradation in Cz-Si solar cells are derived. Furthermore, the model explains why no lifetime degradation is observed in Al-, Ga- and In-doped Cz-Si materials.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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- BibTex
- RIS
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Hrsg. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. S. 2887-2892 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Band C).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Structure and transformation of the metastable centre in CZ-silicon solar cells
AU - Schmidt, Jan
AU - Bothe, Karsten
AU - Hezel, Rudolf
PY - 2003
Y1 - 2003
N2 - In order to reveal the core structure of the performance-limiting metastable defect centre in Czochralski-silicon (Cz-Si) solar cells, the quantitative correlation of the defect concentration with the boron and the oxygen contents is investigated on a large number of different Cz-Si materials. The experimental results indicate that the defect is composed of one substitutional boron and two interstitial oxygen atoms. Formation and annihilation of the metastable boron-oxygen complex are found to be thermally activated processes, characterized by two strongly differing activation energies. Intensity-dependent measurements of the defect generation rate show that the defect generation rate increases proportionally with light intensity below 0.01 suns and saturates at higher intensities. All experimental results can be consistently explained by our recently proposed defect reaction model. In this model, fast-diffusing oxygen dimers (O2i) are captured by substitutional boron (Bs) to form a metastable Bs-O 2i complex. Based on this model, new strategies for an effective reduction of the light degradation in Cz-Si solar cells are derived. Furthermore, the model explains why no lifetime degradation is observed in Al-, Ga- and In-doped Cz-Si materials.
AB - In order to reveal the core structure of the performance-limiting metastable defect centre in Czochralski-silicon (Cz-Si) solar cells, the quantitative correlation of the defect concentration with the boron and the oxygen contents is investigated on a large number of different Cz-Si materials. The experimental results indicate that the defect is composed of one substitutional boron and two interstitial oxygen atoms. Formation and annihilation of the metastable boron-oxygen complex are found to be thermally activated processes, characterized by two strongly differing activation energies. Intensity-dependent measurements of the defect generation rate show that the defect generation rate increases proportionally with light intensity below 0.01 suns and saturates at higher intensities. All experimental results can be consistently explained by our recently proposed defect reaction model. In this model, fast-diffusing oxygen dimers (O2i) are captured by substitutional boron (Bs) to form a metastable Bs-O 2i complex. Based on this model, new strategies for an effective reduction of the light degradation in Cz-Si solar cells are derived. Furthermore, the model explains why no lifetime degradation is observed in Al-, Ga- and In-doped Cz-Si materials.
UR - http://www.scopus.com/inward/record.url?scp=6344281162&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344281162
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 2887
EP - 2892
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion, 2003
Y2 - 11 May 2003 through 18 May 2003
ER -