Structure and stability of thin praseodymium oxide layers on Si(001)

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • H. J. Müssig
  • J. Dabrowski
  • K. Ignatovich
  • J. P. Liu
  • V. Zavodinsky
  • H. J. Osten

Externe Organisationen

  • Goethe-Universität Frankfurt am Main
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)783-788
Seitenumfang6
FachzeitschriftSolid State Phenomena
Jahrgang82-84
PublikationsstatusVeröffentlicht - 2002
Extern publiziertJa
VeranstaltungGettering and Defect Engineering in Semiconductor Technology 2001 - Santa Tecla, Italien
Dauer: 30 Sept. 2001 → 3 Okt. 2001

Abstract

Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

ASJC Scopus Sachgebiete

Zitieren

Structure and stability of thin praseodymium oxide layers on Si(001). / Müssig, H. J.; Dabrowski, J.; Ignatovich, K. et al.
in: Solid State Phenomena, Jahrgang 82-84, 2002, S. 783-788.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Müssig, HJ, Dabrowski, J, Ignatovich, K, Liu, JP, Zavodinsky, V & Osten, HJ 2002, 'Structure and stability of thin praseodymium oxide layers on Si(001)', Solid State Phenomena, Jg. 82-84, S. 783-788.
Müssig, H. J., Dabrowski, J., Ignatovich, K., Liu, J. P., Zavodinsky, V., & Osten, H. J. (2002). Structure and stability of thin praseodymium oxide layers on Si(001). Solid State Phenomena, 82-84, 783-788.
Müssig HJ, Dabrowski J, Ignatovich K, Liu JP, Zavodinsky V, Osten HJ. Structure and stability of thin praseodymium oxide layers on Si(001). Solid State Phenomena. 2002;82-84:783-788.
Müssig, H. J. ; Dabrowski, J. ; Ignatovich, K. et al. / Structure and stability of thin praseodymium oxide layers on Si(001). in: Solid State Phenomena. 2002 ; Jahrgang 82-84. S. 783-788.
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TY - JOUR

T1 - Structure and stability of thin praseodymium oxide layers on Si(001)

AU - Müssig, H. J.

AU - Dabrowski, J.

AU - Ignatovich, K.

AU - Liu, J. P.

AU - Zavodinsky, V.

AU - Osten, H. J.

PY - 2002

Y1 - 2002

N2 - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

AB - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

KW - Ab initio simulations

KW - AES

KW - Heteroepitaxial growth

KW - High-K gate material

KW - Initial stages

KW - STM

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=17444443121&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17444443121

VL - 82-84

SP - 783

EP - 788

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

T2 - Gettering and Defect Engineering in Semiconductor Technology 2001

Y2 - 30 September 2001 through 3 October 2001

ER -