Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 789-794 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solid State Phenomena |
| Jahrgang | 82-84 |
| Publikationsstatus | Veröffentlicht - 2002 |
| Extern publiziert | Ja |
| Veranstaltung | Gettering and Defect Engineering in Semiconductor Technology 2001 - Santa Tecla, Italien Dauer: 30 Sept. 2001 → 3 Okt. 2001 |
Abstract
We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Werkstoffwissenschaften (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Solid State Phenomena, Jahrgang 82-84, 2002, S. 789-794.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Structural investigations of praseodymium oxide epitaxially grown on silicon
AU - Zaumseil, P.
AU - Bugiel, E.
AU - Liu, J. P.
AU - Osten, H. J.
PY - 2002
Y1 - 2002
N2 - We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
AB - We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
KW - Heteroepitaxial growth
KW - High-K gate material
KW - TEM
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=0036130751&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0036130751
VL - 82-84
SP - 789
EP - 794
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
T2 - Gettering and Defect Engineering in Semiconductor Technology 2001
Y2 - 30 September 2001 through 3 October 2001
ER -