Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 054006 |
| Fachzeitschrift | Physical Review Applied |
| Jahrgang | 5 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 9 Mai 2016 |
Abstract
The quality and crystallinity of ultrathin dielectric layers depend crucially on the details of interface formation and chemical stability. Using a combination of photoelectron (XPS) and electron-energy-loss spectroscopy, low-energy electron-diffraction, and transmission electron microscopy (TEM), we show that crystalline epitaxial layers of Ba2SiO4 can be grown on Si(100) substrates from evaporated Ba in oxygen background atmosphere at 650 °C. Since the silicate is chemically by far more stable than the oxides of Si and Ba, an atomically sharp interface with no interface oxide is formed, as confirmed by XPS and TEM. However, the interface is rough on the atomic scale. dc and frequency-dependent electrical measurements reveal a relative dielectric constant of 22.8, low hysteresis in CV measurements, and low leakage currents but still fairly high interface trap densities.
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in: Physical Review Applied, Jahrgang 5, Nr. 5, 054006, 09.05.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Structural, Dielectric, and Interface Properties of Crystalline Barium Silicate Films on Si(100)
T2 - A Robust High- κ Material
AU - Islam, S.
AU - Hofmann, Karl Rüdiger
AU - Feldhoff, Armin
AU - Pfnür, Herbert
PY - 2016/5/9
Y1 - 2016/5/9
N2 - The quality and crystallinity of ultrathin dielectric layers depend crucially on the details of interface formation and chemical stability. Using a combination of photoelectron (XPS) and electron-energy-loss spectroscopy, low-energy electron-diffraction, and transmission electron microscopy (TEM), we show that crystalline epitaxial layers of Ba2SiO4 can be grown on Si(100) substrates from evaporated Ba in oxygen background atmosphere at 650 °C. Since the silicate is chemically by far more stable than the oxides of Si and Ba, an atomically sharp interface with no interface oxide is formed, as confirmed by XPS and TEM. However, the interface is rough on the atomic scale. dc and frequency-dependent electrical measurements reveal a relative dielectric constant of 22.8, low hysteresis in CV measurements, and low leakage currents but still fairly high interface trap densities.
AB - The quality and crystallinity of ultrathin dielectric layers depend crucially on the details of interface formation and chemical stability. Using a combination of photoelectron (XPS) and electron-energy-loss spectroscopy, low-energy electron-diffraction, and transmission electron microscopy (TEM), we show that crystalline epitaxial layers of Ba2SiO4 can be grown on Si(100) substrates from evaporated Ba in oxygen background atmosphere at 650 °C. Since the silicate is chemically by far more stable than the oxides of Si and Ba, an atomically sharp interface with no interface oxide is formed, as confirmed by XPS and TEM. However, the interface is rough on the atomic scale. dc and frequency-dependent electrical measurements reveal a relative dielectric constant of 22.8, low hysteresis in CV measurements, and low leakage currents but still fairly high interface trap densities.
UR - http://www.scopus.com/inward/record.url?scp=84973352406&partnerID=8YFLogxK
U2 - 10.1103/physrevapplied.5.054006
DO - 10.1103/physrevapplied.5.054006
M3 - Article
AN - SCOPUS:84973352406
VL - 5
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
IS - 5
M1 - 054006
ER -