Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2323-2327 |
| Seitenumfang | 5 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 78 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 15 Aug. 1995 |
| Extern publiziert | Ja |
Abstract
Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 78, Nr. 4, 15.08.1995, S. 2323-2327.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Structural characterization of SinC δ layers embedded in a silicon matrix
AU - Ruvimov, S.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1995/8/15
Y1 - 1995/8/15
N2 - Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
AB - Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
UR - http://www.scopus.com/inward/record.url?scp=0000774109&partnerID=8YFLogxK
U2 - 10.1063/1.360149
DO - 10.1063/1.360149
M3 - Article
AN - SCOPUS:0000774109
VL - 78
SP - 2323
EP - 2327
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
ER -