Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 095004 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 29 |
| Ausgabenummer | 9 |
| Publikationsstatus | Veröffentlicht - 1 Sept. 2014 |
Abstract
We present structural investigations of implant-induced crystal defects after ion implantation of boron on randomly textured Si(001) and subsequent annealing. We find that the use of a tilt angle and screening oxide impacts the local doping profiles as well as the resulting defect distribution after annealing. Ion implantation of boron with a dose of 2 • 1015 cm-2 on a sample tilted by 6° towards <100> results in 3 different local ion doses: 7.6 • 1014 cm-2 for those sides of the pyramids which are tilted into the ion beam, 5.3 × 10 14 cm-2 for those sides which are tilted out of the beam and 1.7 × 1015 cm-2 for the valleys in between the pyramids. This difference in ion dose is mirrored by the local defect densities observed after annealing.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 29, Nr. 9, 095004, 01.09.2014.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Structural analysis of textured silicon surfaces after ion implantation under tilted angle
AU - Krügener, Jan
AU - Bugiel, Eberhard
AU - Peibst, Robby
AU - Kiefer, Fabian
AU - Ohrdes, Tobias
AU - Brendel, Rolf
AU - Osten, Hans-Jörg
PY - 2014/9/1
Y1 - 2014/9/1
N2 - We present structural investigations of implant-induced crystal defects after ion implantation of boron on randomly textured Si(001) and subsequent annealing. We find that the use of a tilt angle and screening oxide impacts the local doping profiles as well as the resulting defect distribution after annealing. Ion implantation of boron with a dose of 2 • 1015 cm-2 on a sample tilted by 6° towards <100> results in 3 different local ion doses: 7.6 • 1014 cm-2 for those sides of the pyramids which are tilted into the ion beam, 5.3 × 10 14 cm-2 for those sides which are tilted out of the beam and 1.7 × 1015 cm-2 for the valleys in between the pyramids. This difference in ion dose is mirrored by the local defect densities observed after annealing.
AB - We present structural investigations of implant-induced crystal defects after ion implantation of boron on randomly textured Si(001) and subsequent annealing. We find that the use of a tilt angle and screening oxide impacts the local doping profiles as well as the resulting defect distribution after annealing. Ion implantation of boron with a dose of 2 • 1015 cm-2 on a sample tilted by 6° towards <100> results in 3 different local ion doses: 7.6 • 1014 cm-2 for those sides of the pyramids which are tilted into the ion beam, 5.3 × 10 14 cm-2 for those sides which are tilted out of the beam and 1.7 × 1015 cm-2 for the valleys in between the pyramids. This difference in ion dose is mirrored by the local defect densities observed after annealing.
KW - ion implantation
KW - silicon
KW - solar cells
KW - textured surface
UR - http://www.scopus.com/inward/record.url?scp=84906546291&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/29/9/095004
DO - 10.1088/0268-1242/29/9/095004
M3 - Article
AN - SCOPUS:84906546291
VL - 29
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095004
ER -