Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 113104 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 110 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 13 März 2017 |
Abstract
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 110, Nr. 11, 113104, 13.03.2017.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Strongly temperature dependent resistance of meander-patterned graphene
AU - Vasileva, G. Yu
AU - Smirnov, D.
AU - Vasilyev, Yu B.
AU - Nestoklon, M. O.
AU - Averkiev, N. S.
AU - Novikov, S.
AU - Kaya, I. I.
AU - Haug, R. J.
N1 - Funding information: G.Yu.V. and Yu.B.V. are grateful to I. V. Gornyi, A. P. Dmitriev, and V. Yu. Kachorovskii for helpful discussions. This work was partially supported by scientific programmes of the RAS. M.N. acknowledges financial support from RFBR Grant No. 16-02-00375. Yu.B.V. acknowledges financial support from RFBR Grant No. 16-02-00854. R.J.H. acknowledges support by DFG SPP 1459 Graphene.
PY - 2017/3/13
Y1 - 2017/3/13
N2 - We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
AB - We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
UR - http://www.scopus.com/inward/record.url?scp=85016145328&partnerID=8YFLogxK
U2 - 10.1063/1.4978597
DO - 10.1063/1.4978597
M3 - Article
AN - SCOPUS:85016145328
VL - 110
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 11
M1 - 113104
ER -