Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 045122 |
| Fachzeitschrift | AIP Advances |
| Jahrgang | 14 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - Apr. 2024 |
| Extern publiziert | Ja |
Abstract
The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: AIP Advances, Jahrgang 14, Nr. 4, 045122, 04.2024.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures
AU - de Vasconcellos Lourenço, R.
AU - Horenburg, P.
AU - Henning, P.
AU - Bremers, H.
AU - Rossow, U.
AU - Hangleiter, A.
N1 - Publisher Copyright: © 2024 Author(s).
PY - 2024/4
Y1 - 2024/4
N2 - The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.
AB - The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.
UR - http://www.scopus.com/inward/record.url?scp=85190537946&partnerID=8YFLogxK
U2 - 10.1063/5.0187072
DO - 10.1063/5.0187072
M3 - Article
VL - 14
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 4
M1 - 045122
ER -