Stress relieving with resistive materials based on silicon carbide (SiC)

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

Autoren

  • J. Gärtner
  • Ernst Gockenbach
  • H. Borsi

Organisationseinheiten

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Details

OriginalspracheEnglisch
Seiten759-762
Seitenumfang4
PublikationsstatusVeröffentlicht - 1998
Veranstaltung1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Dauer: 27 Sept. 1998 → 30 Sept. 1998

Konferenz

Konferenz1998 International Symposium on Electrical Insulating Materials
OrtToyohashi, Jpn
Zeitraum27 Sept. 1998 → 30 Sept. 1998

Abstract

The stress relieving on components of high-voltage equipment with semiconducting materials based on silicon carbide (SiC) is discussed. Two different types of conducting layers are presented: one kind consists of a ceramic overglaze, the other is based on different organic mastics. The electrical behavior of both types of conductive layers, used in cables and cable accessories are also discussed.

ASJC Scopus Sachgebiete

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Stress relieving with resistive materials based on silicon carbide (SiC). / Gärtner, J.; Gockenbach, Ernst; Borsi, H.
1998. 759-762 Beitrag in 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.

Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review

Gärtner, J, Gockenbach, E & Borsi, H 1998, 'Stress relieving with resistive materials based on silicon carbide (SiC)', Beitrag in 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, 27 Sept. 1998 - 30 Sept. 1998 S. 759-762.
Gärtner, J., Gockenbach, E., & Borsi, H. (1998). Stress relieving with resistive materials based on silicon carbide (SiC). 759-762. Beitrag in 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.
Gärtner J, Gockenbach E, Borsi H. Stress relieving with resistive materials based on silicon carbide (SiC). 1998. Beitrag in 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.
Gärtner, J. ; Gockenbach, Ernst ; Borsi, H. / Stress relieving with resistive materials based on silicon carbide (SiC). Beitrag in 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.4 S.
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