Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3578-3581 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical review letters |
| Jahrgang | 72 |
| Ausgabenummer | 22 |
| Publikationsstatus | Veröffentlicht - 1994 |
| Extern publiziert | Ja |
Abstract
We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Physical review letters, Jahrgang 72, Nr. 22, 1994, S. 3578-3581.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si
AU - Rücker, H.
AU - Methfessel, M.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1994
Y1 - 1994
N2 - We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.
AB - We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.
UR - http://www.scopus.com/inward/record.url?scp=0038118393&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.72.3578
DO - 10.1103/PhysRevLett.72.3578
M3 - Article
AN - SCOPUS:0038118393
VL - 72
SP - 3578
EP - 3581
JO - Physical review letters
JF - Physical review letters
SN - 0031-9007
IS - 22
ER -